graphene production via nonoxidizing liquid exfoliation

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graphene production via nonoxidizing liquid exfoliation ( graphene-production-via-nonoxidizing-liquid-exfoliation )

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Table 4: Summary of the bottom-up and top-down production methods, highlighting key graphene characteristics as well as the advantages and disadvantages of the various approaches. Method Che mical Vapor Deposition (CVD) Arc Discharge Advantages Potentially production rate Disadvantages Defective graphene Harsh conditions Defective graphene Process details From sodium ethoxide Raman D/G* 1 (532 nm) - 0.2 0.16 - 0.55-0.92 (633nm) ~0.8 (514.5nm) 0.33 (633nm) Very low D band observed 0.93 (514nm) 0.2-0.4 (633nm) 0.15 (514nm) - 0.25 (633nm) 0.35 - 0.2-0.5 Selectivity Higher selectivity to 4 layers - - 2-4 layers Mainly 2 layers 6 layers Yield Production Reference (wt%) rate (g/h)** high of be Atmospheric CVD Cold-wall CVD High speed roll to roll In Hydrogen In N2 and H2 with AC current Helium with O2 and H2 In pyrene surfactant In NMP - - - - - - 10-20 - 5.3 25.2 - - 140 141 142 143 144 28 145 Pressure High grap he ne can produced quantity H2-inert gas mixture 0.26-0.31 Mostly 2-4 layers with a small portion of 5-10 layers - ~3 146 147 Epitaxial growth High coverage of monolayer across the metal surface Defective graphene On SiC - 1-2 layers - - Sonication Low processing time required Low cost Defective graphene Low concentration of graphene 74 8.3-12 8×10-3 18 ~28% monolayer. <5 layers - - - - Mainly 5-10 layers Mainly 2-3 layers Mainly 4 layers 90% less than 5 layers - 0.02 - 0.018 - 0.015 150 - 8×10-3 151 5 5×10-3 153 In surfactant In isopropanol In NMP In chloroform In gum Arabic In no n- io nic surfactant In surfactants In NMP 148 149 - - In surfactant, NMP and ortho-dichlorobe nze ne (o-DCM) - ~28% monolayer, 19% bilayer. 1.2 - 152 polyme ric 154 0.5 5×10-3 27 - - 4 ~5×10-3 20 62

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