Synthesis and Fabrication of Graphene and Graphene Oxide

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Synthesis and Fabrication of Graphene and Graphene Oxide ( synthesis-and-fabrication-graphene-and-graphene-oxide )

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A. Adetayo, D. Runsewe Figure 12. SEM micrographs of graphene via thermal CVD on Cu substrate: (a) Big and small Cu grains coexisting. Scale bar is 300 μm; (b) & (c) Image showing Cu grain boundary (Cu GB), multilayer graphene (yellow circles), and graphene folding lines (red arrows). Scale bars are 5 μm [87]. Figure 13. Graphene transfer process (a)-(f) from Cu substrate to SiO2/Si substrate: (a) Graphene synthesized on Cu foil; (b) Graphene/Cu substrate coated with PMMA in Fe(NO3)3 solution; (c) Graphene on PMMA; (d) Cu etchant solution cleaning using DI water; (e) Contacting SiO2/Si substrate with graphene on PMMA in DI water; (f) Final sample by removing PMMA using solvents; (g) Photograph of transferred CVD graphene on SiO2-on-Si substrate. Scale bar is 1 cm [87]. Numerous reports have shown graphene synthesis on other metal thin films and metal foils [34]. However, graphene growth by CVD method has been mostly done on Cu [27] [34] and Ni substrates [34]. The problem of producing graphene on Ni substrate included the time consuming non-self-limiting growth, and the production of large number of wrinkles and folds. Copper substrates have demonstrated more favorable CVD growth of graphene [86]. 2) Plasma-Enhanced Chemical Vapor Deposition This process of graphene production involves chemical reactions of reacting gases inside a vacuum chamber in the presence of plasma resulting in deposits of thin film on the surface of the substrate (Figure 9(b)), thus, the name, plas- ma-enhanced chemical vapor deposition (PECVD). Sources of plasma in PECVD can include radio frequency (RF), microwave, and inductive coupling (electrical DOI: 10.4236/ojcm.2019.92012 219 Open Journal of Composite Materials

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