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Section 2.6 Open circuit voltage (OCV) Figure 2-12: Numerical example of different OCV modeling approaches (cHC+(SoCC=0) = 6,000 molm-3) Figure 2-12 shows the OCV derived with different modeling approaches. If we neglect the contribution of hydrogen protons, the simulated OCV is significantly lower, which does not reflect the reality [14, 17, 44]. However, considering hydrogen protons almost exclusively adds an offset to the Nernst equation. This is because the concentration of hydrogen protons in the negative and positive electrolyte is high; mainly due to the dissociation of the sulfuric acid [17]. Hence, the comparatively small number of additional hydrogen protons, which are released on both half-sides during the charging process do not introduce significant OCV variations. Thus, it has become a common procedure to consider the proton concentration to be constant in both electrolytes. Consequently, we can remove the proton concentration in the positive electrolyte from the logarithmic term and add it to the standard cell potential. The sum of the standard cell potential and the proton contribution to the OCV is denoted as the formal cell potential, as shown in Eq. (2-46) [41]. The remaining deviation between the complete and the simplified Nernst equation in Figure 2-12 can be explained by the standard potential in the complete Nernst equation. The standard potential refers to a total vanadium concentration of 1,000 molm-3. In the electrolyte considered in this work, a vanadium concentration of 1,600 molm-3 is used, which increases the OCV. The OCV is also strongly affected by the concentration of the sulfuric acid. A higher sulfuric acid concentration relates to a higher OCV [17]. 0 GT c2C⋅c5C EOCVC E F ln c3C⋅c4C Wherein: E0 Formal cell potential (V) (2-46) 36PDF Image | Model-based Design Vanadium Redox Flow Batteries
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