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Materials 2022, 15, 6231 11 of 15 Table 1. Comparison of performances of chalcogenide-based anodes for SIBs. Anode Ga2S3 Ga2S3–C Sb2Se3/C Sb2S3–rGO Sb2S3–C Sb2S3@SnS@C Sb2S3 In2 S3 /C Co3Se4@C Fe3 Se4 @C Bi2Te3 SbTe–C Ga2Te3–TiO2–C Cycling Performance 476 mAh·g−1 after 100 cycles at 0.4 A·g−1 385 mAh·g−1 after 200 cycles at 0.1 A·g−1 485.2 mAh·g−1 after 100 cycles at 0.2 A·g−1 537 mAh·g−1 after 70 cycles at 0.1 A·g−1 455.8 mAh·g−1 after 100 cycles at 0.1 A·g−1 437 mAh·g−1 after 100 cycles at 1 A·g−1 384 mAh·g−1 after 50 cycles at 0.2 A·g−1 372 mAh·g−1 after 200 cycles at 0.5 A·g−1 449 mAh·g−1 after 20 cycles at 0.1 A·g−1 439 mAh·g−1 after 25 cycles at 0.05 A·g−1 364 mAh·g−1 after 1200 cycles at 5 A·g−1 421 mAh·g−1 after 200 cycles at 0.1 A·g−1 437 mAh·g−1 after 300 cycles at 0.1 A·g−1 4. Conclusions Rate Capability 283 mAh·g−1 at 2 A·g−1 94 mAh·g−1 at 2.0 A·g−1 237.9 mAh·g−1 at 2.0 A·g−1 Synthesis Method Ref. Vapor thermal [55] annealing Sulfuration process [35] Hydrothermal [31] process Ultrasonication [63] method Modified natural [64] stibnite ore Hydrothermal [65] method Hydrothermal [66] 290 mAh·g−1 263 mAh·g−1 448 mAh·g−1 239 mAh·g−1 236 mAh·g−1 328 mAh·g−1 - at 3.2 A·g−1 at 1.0 A·g−1 at 5.0 A·g−1 at 5.0 A·g−1 at 2.0 A·g−1 at 5.0 A·g−1 method Electrospinning process [67,68] 339 mAh·g−1 at 10 A·g−1 413 mAh·g−1 at 1 A·g−1 318 mAh·g−1 at 10 A·g−1 Annealing process [69] Electrospinning [70] process Chemical reduction [36] method Ball milling [71] Ball milling This work We demonstrated a Ga2Te3-based composite as a prospective anode material for SIBs. The Ga2Te3–TiO2·C(10%) anode achieved a high reversible capacity of 437 mAh·g−1 after 300 cycles at 0.1 A·g−1, as well as a high rate capability (CR of 96% at 10 A·g−1 relative to 0.1 A·g−1). The nanoconfined Ga2Te3 crystallites embedded within an electrically conduc- tive TiO2–C hybrid matrix effectively accommodated the Ga2Te3 particle volume variation and avoided the agglomeration of Ga during electrochemical reactions. In addition, Na ion diffusion kinetics and mechanical stability were enhanced by this beneficial morphol- ogy, thereby achieving high capacity and long-term cycling performance These findings offer a new direction toward the development of high-performance SIBs with long cycle lifetimes and expansion of the Ga- and Te-based materials in other electrochemical energy storage systems. Supplementary Materials: The following supporting information can be downloaded at: https: //www.mdpi.com/article/10.3390/ma15186231/s1, Figure S1: XRD pattern of Ga2Te3–TiO2–C with different concentration of C. Figure S2: The existence of different forms of GaxTey (namely, Ga2Te5 and GaTe). Figure S3: HRTEM image of Ga2Te3–TiO2–C(10%). Figure S4: SEM image of distribution of the elements in Ga2Te3–TiO2–C(10%). Figure S5: EDX spectrum of as-synthesized Ga2Te3–TiO2– C(10%). Figure S6: EDX analysis of (a) Ga2Te3–TiO2–C(20%), and (b) Ga2Te3–TiO2–C(30%). Figure S7: Galvanostatic discharge-charge profiles of (a) Ga2Te3–TiO2–C(20%) and (b) Ga2Te3–TiO2–C(30%) for SIBs. Figure S8: Cyclic performance of various electrodes at 100 mA g−1. Figure S9: DCP profiles of Ga2Te3–TiO2–C(10%) during 300 cycles measured at 100 mA g−1: (a) 1−150 cycles, (b) 150−300 cycle. Enlarged view of (c) reduction and (d) oxidation peaks. Figure S10: SEM image of Ga2Te3–TiO2– C(10%) after 300 cycles. Figure S11: EDX analysis of Ga2Te3–TiO2–C(10%) after 300 cycles. Figure S12: (a) DCP profiles of Ga2Te3–TiO2–C(10%) during initial 200 cycles measured at 500 mA g−1. Enlarged view of (b) oxidation and (c) reduction peaks. Figure S13: (a) DCP of Ga2Te3–TiO2–C(10%) from 300 cycle to 500 cycles measured at 500 mA g−1. Enlarged view of (b) oxidation and (c) reduction peaks. Figure S14: DCP profiles of Ga2Te3–TiO2–C(10%) (a) at 100 mA g−1 during 300 cycles and (b) at 500 mA g−1 during 500 cycles. Figure S15: Coulombic efficieny of Ga2Te3-TiO2 with different C content at current densities of (a) 100 and (b) 500 mA g−1. Figure S16: (a) CV curves of Ga2Te3–TiO2–CPDF Image | Ga2Te3-Based Anodes for Sodium-Ion Batteries
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