Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films

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Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films ( investigation-metal-insulator-transition-magnetron-sputtered )

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Abstract Metal-insulator transition is one of the most interesting phenomena to be investigated in the matter of solid state physics. Not only for the possible applications but for the pure physics of this phenomenon there has been immense number of works devoted to its investigation. The origin and driving factor of the transition may differ significantly depending on the material of interest, be it Coulomb repulsion, spin- orbit coupling and others. Among a vast number of compounds rare earth nickelates, the object of this thesis, represent only one type of transition. In those materials, the transition is yet to be thoroughly described. Present description involves considering charge disproportionation on the nickel site, which in turn affects the overlap between the nickel and oxygen ligand bands and thus the electrical conductivity of the mate- rial. A consistent variation of electrical properties between the mem- bers of the nickelate family with respect to rare earth element has been observed. That occurs simultaneously with the level of struc- tural distortion down the family line. If the structural distortion is the driving force for the transition, its influence should also be evi- denced with respect to dimensions of the material. The argument that is discussed in this dissertation is that reduced dimension of samar- ium nickelate compound does influence its crystalline structure and, what follows, the electronic structure and metal-insulator transition. This correlation is a possible starting point for developing theory on metal-insulator transition in thin films. The argument is verified by studying a series of magnetron sputtered samarium nickelate thin film materials with variable thickness and synthesis conditions. As a result, nearly amorphous, polycrystalline as well as strongly textured films were obtained in thickness range between 20-500 nm. Both surface sensitive and bulk measurement techniques were used to characterize the materials and investigate the occurrence of the metal-insulator transition. However the investigation iii

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