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1.2 Physical properties of the RNiO3 system Figure 1.3: Band gap model for RE oxides - four types of the RE oxides: A - occupied and unoccupied f-states are located in the valence and conduction bands respectively, B - occupied f-states are located above valence band, unoccupied f- states are in the conduction band, C - occupied f-states are located in the valence band, unoccupied f-states are located below conduction band, D - occupied and unoccupied f-states are located inside the band gap (23) for TM silicates, as the free energy of formation of the former is about δG ≪ -100 kJ/mol as compared to δG ≈ −1 − 10kJ/mol for TM silicates(23). The in- termediate compounds are not present when oxides are deposited on Ge or GaAs surfaces. 1.2 Physical properties of the RNiO3 system 1.2.1 Crystallographic structure The correlation between crystallographic structure and physical properties is un- equivocally visible among the series of RNiO3 compounds. The size of correspond- ing rare earth ion influences mutual configurations of atoms in the perovskite-like unit cell of RNiO3 structure thus triggering changes in physical properties (76). Almost all RNiO3, apart from LaNiO3 (LNO) compounds have an orthorhom- bically distorted perovskite structure described by Pbnm space group (29, 78) in the metallic state. This crystalline structure is observed in compounds synthe- sized at high oxygen gas pressure. At lower pressures rhombohedral phase is favoured for NdNiO3 (NNO) (95). At the MIT this structural symmetry is low- 5PDF Image | Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films
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