Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films

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Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films ( investigation-metal-insulator-transition-magnetron-sputtered )

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1. INTRODUCTION The hysteresis in thermal dependence of resistivity in PrNiO3 was explained as a gradual transition from metallic to insulating phase. The transition occurs between 130 K (TMI) and around 74 K. Between 130-102 K a metallic matrix with nonmetallic inclusions is present, and between 102-74 K is more transition- ing to nonmetallic matrix with metallic phase inclusions. This behaviour was consistent to the first-order character of the transition. The Seebeck coefficient measurements indicated that in both states the majority of carriers are of electron character(35). For bulk NdNiO3 the found hysteresis was from about 130 K to MIT at 205 K(36). The Seebeck coefficient measured for high temperatures is negative and has a small absolute value of about 22 μV/K at 205 K which indicates a typical metallic state with electron-like charge carriers. The Seebeck coefficient was used to determine the Fermi energy, with using the relaxation time approximation π2k2 g(ε) S(T) = − T[ ∂ 3e n ∂ε ε=EF withg(ε)beingdensityofstates,n-chargecarrierdensity,EF -Fermienergy,and τ(ε) ∼ εα - energy-dependent relaxation time, with α corresponding to scattering mechanism. Another assumptions included parabolic band and for the case in article the α = −1. This lead to a Drude model relation of the Seebeck coefficient S(T) = −π2k2 T . (1.15) 6e EF For the metallic region, the estimated Fermi energy was found 0.41 eV for NNO, 0.4 for PNO and 0.21 for LNO. Typical metals have a higher Fermi en- ergy - for example Cu 7 eV and Au 5.5 eV (63). But the energy is also higher if the relaxation time is energy independent. Here as well, at low temperatures the Seebeck coefficient was negative suggesting that the majority of carriers is electron-like. However below 110 K its absolute value decreases that for the au- thors was an indication that dominant mechanism is not semiconductor-like or that some regime of charge compensation is present. The characteristic tempera- tures of the coefficient’s temperature dependence are a bit shifted as compared to resistivity. For Both quantities, on heating the absolute values are greater than on cooling. Additional characteristics of electronic structure were estimated as well based on the measurements. Density of states at the Fermi level g(EF ) was estimated by assuming • a parabolic band, 20 + 􏰛 ln(τ(ε))􏰛􏰛 ], (1.14)

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