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1.5 Application potential of SmNiO3 thin films TMI. Above the 20 u.c. thickness of the film the strain becomes more important and forces Ni3d bandwidth to to increase which is said to cause metallic state and decrease of TMI with decrease of thickness down to 20 u.c (97). It was also found that for respective thickness of the films the resistivity values of compressively strained NNO films on LAO are lower than for films on STO that exhibit tensile strain. Also, an unusual thing is that while in bulk, NNO has only two phase regimes - paramagnetic metal and antiferromagnetic insulator. But the authors noticed that in the form of thin films NNO a three-phase diagram is pronounced, resembling phase diagrams of RNOs with smaller rare earth ions. The surface effect was investigated by capping the ultrathin insulating films with a layer of the substrate material. In these films the transition was recovered and a similar behaviour to uncapped films was noticed, with the curves behaviour resembling each other for similar thicknesses. This suggests dimensionality effect rather than a surface one. 1.5 Application potential of SmNiO3 thin films The existence of MIT in SmNiO3 films and other films from RNiO3 family makes them perceived as candidates in numerous applications. However long this time- to-market is the predicted applications include: - oxide electronics - neuromorphic learning circuits, capable of analog compu- tation, - nonvolatile memory - that require fast switching speed and scalability, - switchable or reconfigurable interconnects and threedimensional integrated circuits - when MIT is present not only in-plane but also out-of plane (49). In SNO/LAO and SNO/Si films a permanent change of resistivity above MI temperature was described as a memristive character of the films (49). The vari- ation was also noticed with applying 10 V voltage in 1 s pulses to 80 nm film. Such pulses could induce a local MIT through Joule heating. Another mechanism - high current density during the pulse induces effective doping of ’the channel’ as in VO2. A gradual resistivity increase with saturation was observed at RT but at higher temperature the resistivity did not saturate after the applied 8 pulses. Authors postulated that it may be possible to induce MIT with applied voltage. This behaviour might be of memristive type, however as it is probably related to permanent oxygen loss, it is not reversible which is not of interest for electronic devices. 31PDF Image | Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films
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