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1.5 Application potential of SmNiO3 thin films Figure 1.13: I-V characteristics of SNO rectifying device - The possible application of the SNO thin film deposited on Si. The graph shows I-V characteristic in log-log plot, showing rectification above certain voltage, negative data is ploted in the absolute values in order to clearly show the differences in the currents between positive and negative polarization. As presented in (48). with time probably due to depolarization field due to finite dielectric constant of silicon which would degrade polarization of SNO film. The retention time of 10 s at RT is longer than the time of transistor-capacitor based silicon dynamic memory even though it is based on a single transistor. 33PDF Image | Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films
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