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Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films

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Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films ( investigation-metal-insulator-transition-magnetron-sputtered )

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2.5 Atomic Force Microscopy contact point into the film’s volume. Figure 2.12: Schematic view of local conductivity AFM measurements - Additional bias voltage is applied between the scanning tip and sample. While standard topography scan is performed, the bias triggers current flow and its value is measured at each point of sample surface. This way both topography and local current map are collected. Scanning tip is in general made of silicon and its electrical conductivity is provided by a metallic coating of the tip. There are other options, like full metal tips, heavy doped silicon, or other materials, however, they are not as popular as standard metal-coated Si tips. In case of performed local conductivity measure- ment a silicon Pt-Ir coated tips were used from various manufacturers, mostly Budget Sensors. In several cases, a non-contact mode was applied to obtain a better resolution of the film’s surface topography. In no-contact (or tapping) mode, the tip oscillates near its resonance frequency. The interaction with the surface shifts the oscillation frequency of the tip, the shift is higher the smaller is the tip-surface distance. This can be used for the AFM feedback loop. For these measurements typical silicon tips are used due to their sharpness (tip apex <10 nm) and prevalence. Microscopic investigation of samples topography and local conductivity mea- surements were taken with AFM/STM VT from Omicron and RHK AFM. RHK is a special microscope with Besocke-type head. All experiments were performed in an ultra-high vacuum of the order of 10−9 − 10−10 mbar. Obtained data were analysed with the use of Vernissage (mostly I-V curves and data export), WSxM (the I-V maps) (52, 53) and Gwyddion (topography and local conductivity maps) software (64, 81). Measurements were taken at different temperatures in order to investigate the variation of current response to applied voltage below and above expected metal-insulator transition. 55

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