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3 Film characterization 3.1 Fabrication process Rare-earth nickelate thin films can be obtained with a variety of techniques such as sputtering (67), pulsed laser deposition (15). However the preparation of sto- ichiometric compounds was proven to be difficult, both as bulk (powders) (13) and as thin films (RF sputtering) due to demanding preparation conditions. For- mation of the stoichiometric phase requires either high oxygen partial pressure during growth or during subsequent post-annealing. The details can be found in an updated diagram for thermodynamical phase stability of SmNiO3 assem- bled based on thermodynamical calculations conducted by Jaramillo et al. and on results obtained for different preparation conditions (61). What follows is that hardly any single process is able to produce stable SmNiO3 thin films. Standard DC magnetron sputtering uses plasma generated by direct current between the cathode (target) and anode. It is the most basic of sputtering methods that allows for fairly easy, fast deposition of metallic layers. However, it is not suitable for insulating compounds for which a positive charge build-up may arise due to anode ion bombardment and subsequent electron depletion in the target material. In that case the radio frequency (RF) magnetron sputtering method is used. Basic scheme of the method is presented in figure 3.1. This technique was applied for deposition of SmNiO3 films in Universit ́e du Maine, Le Mans, France. SmNiO3 films were deposited on monocrystalline silicon Si(100) substrates. Silicon wafers are widespread materials of choice in the electronics industry for applications as chips and microchips in a variety of products to serve a variety of purposes. In view of possible applications of SmNiO3 films it is reasonable to 59PDF Image | Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films
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