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3. FILM CHARACTERIZATION Figure 3.1: Scheme of Radio Frequency magnetron sputtering experi- ment - The argon/oxygen atoms are ionized in the deposition chamber, accelerated to the target material from which they sputter away the materials particles. The particles are deposited on the substrate which is at the same time the anode of the set-up. study their properties as deposited on silicon. However, it was shown, that the growth of RNO phase is much easier on a substrate with a matching perovskite- like structure. In general the SmNiO3 films have been grown by RF magnetron sputtering on various substrates like SrTiO3, LaAlO3, SrLaAlO4 (9, 96) or by MOCVD on LAO(001) (57). The epitaxial SNO films were found to be stabilized easily on LaAlO3 (LAO) with only a minor addition of other phases (33), due to the very small lattice mismatch that averages 0.1 %. Other perovskite-like substrates are not easily implemented, and the growth of a pure SNO phase without the large contribution of binary oxides like NiO or Sm2O3 was impossible, with an example of SrTiO3(STO) (33). In order to improve the phase stabilization methods such as MOCVD band-flash injection were introduced (17). A chemical route was also applied together with spin coating deposition of lighter rare-earth nickelates on LAO and STO (001) (72). La- and Nd-based nickelates were observed to grow epitaxially with small amount of polycrystalline phase, while films with Pr and Sm contained some binary oxide impurities in epitaxial films. In general, the single-phase was found to be stable up to 200 nm on LAO, while films with 500 nm thickness exhibited a significant amount of 60PDF Image | Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films
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