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3.1 Fabrication process 63 Table 3.2: Details of annealing process of SmNiO3 thin films. Three sessions of annealing procedure were held. (*) 2 min O2 spraying in pressure reactor, additional cleaning in ultrasonic cleaner in ethanol for 15 min. (**) initial 4h 15min sample spent at 295 K and 68 bar O2 with no heating. Sample code name includes information about the sputtering time value in minutes, type of plasma composition (A/AO) and the presence (w) or absence (n) of subsequent post-annealing. Stage Parameter Atmosphere interval between deposition and annealing annealing session Tset , K temperature increment [K/min] preliminary operation Tinitial, K pinitial, bar panneal, bar Tanneal, K Tfinal, K pfinal, bar Comments S-4AOw Ar+O2 1d 5h 1. 1073 5 (*) 295 68 182 1068 296 60 S-12AOw S-24AOw Ar+O2 Ar+O2 4d 20h 7d S-30AOn S-30AOw S-36AOw Ar+O2 Ar+O2 Ar+O2 4d 1h 4d 12h S-42AOw S-5Aw Ar+O2 Ar 7d 7d S-42An S-42Aw Ar Ar Initial parameters setup 5 5 (*) (*) (*) - 299 299 - 1073 - 5 - (*) - 295 - 68 - 182 - 1073 - 296 - 60 - (**) Annealing 68 68 175 180 1066 1068 nd. nd. nd. nd. 175 175 - 1066 1068 182 180 1068 1068 nd. nd. nd. nd. 2. 3 1073 1073 5 5 - 2. 2. - 1073 1073 3 3 1073 1073 5 5 1d 5h - 1. (*) 299 298 298 298 - 68 68 68 68 (**) - - - - - - - nd. nd. - nd. nd.PDF Image | Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films
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