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3.2 Chemical composition is easier to form a 3-dimensional cluster of adatoms/ islands. In this mode, rough multilayer films are grown. This has not been observed for Ar films due to lack of data (samples), however, the estimated film growth speed has also diminished for argon films. Assuming equal sputtering rate, this implies that the thicker films are denser than the thinner films. Figure 3.10: Growth speed of SmNiO3 thin films - Calculated from XRF. What is more, the experiments revealed that the films contain additional el- ements such as chromium and iron, which are deposited on the film during the high-pressure annealing process. The contaminants are not present in films that did not undergo annealing. However, the annealing procedure was essential to obtain the proper crystallographic phase. The elemental distribution was found to be quite homogeneous in all films, with very slight variation of the composition as shown in the maps. However a sig- nificant influence of the sputtering atmosphere was detected, as evident from the Sm:Ni atomic ratio (figure 3.11 c). For the films grown under Ar+O2 atmosphere, the ratio is only slightly below 1 with a small surplus of nickel with respect to samarium atomic content. Whereas, the films grown in pure argon have a large Ni surplus and the Sm:Ni ratio varies from 0.75 to 0.85. Additionally, the Sm:Ni ratio depends slightly on the film thickness, and approaches 1 for thicker films. The annealing process did not affect neither the thickness nor the Sm:Ni atomic 71PDF Image | Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films
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