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4 Investigation of metal-insulator transition In principle metal-insulator transition is related to a rapid change in electrical resistivity even by a few orders of magnitude. This sudden change is most often induced by temperature, but may also be triggered by electrical field or pressure. Most common way of investigating the presence of MIT is by measuring electrical resistivity as a function of temperature. The task is fairly easy for macroscopic bulk samples for which the electrical contact are of minor size with respect to the dimensions of a sample. Whereas for thin film materials the size of a contact starts to play a role. On top of that the volume of bulk material that is studied is in general more homogeneous than a thin film. When performing traditional four-point method resistivity measurements on thin film materials the surface becomes a critical area for the measurement. In bulk material the surface can always be cleaned or polished so to present a pristine material. If not prepared in clean conditions, the electrodes deposited on thin film surface will always have a layer of foreign material between them and the sample surface. This may strongly influence the absolute values of measured resistivity. The SmNiO3 films deposited by magnetron sputtering exhibit the proper crys- talline structure only after high-pressure oxygen annealing. Unfortunately this technological step results in formation of chromium oxide deposits on the surface as well as other elements such as aluminium, sodium and carbon. The impuri- ties reduce the area of surface that is made of the given film material, and in turn the temperature behaviour of the material is investigated not only in the proper samarium nickelate perovskite phase but also in the impurity phases. All 87PDF Image | Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films
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