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5 Conclusions This work was performed in order to understand what physical parameters, or their combination, trigger the metal-insulator transition in SmNiO3 thin film ma- terials. This required a set of samples with a selected varying feature, such as film thickness, and their thorough investigation by a broad range of modern mea- surement techniques. Obtained materials were analyzed using various techniques such as microscopy, spectroscopy and diffraction in order to gain insight into a phenomenon that made the compound recognizable, that is the metal-insulator transition. Some of the techniques, such as X-ray diffraction, Time-of-Flight Sec- ondary Ion Mass Spectroscopy and X-ray Fluorescence Spectroscopy were used solely for initial film characterization. While X-ray Photoelectron Spectroscopy, Atomic Force Microscopy and its variation Local Conductivity Atomic Force Mi- croscopy, as well as Raman Spectroscopy, were the core techniques that provided means for investigation of metal-insulator phenomenon. Direct macroscopic method to verify the presence of metal-insulator transition, that is the macroscopic temperature resistance measurements, was found to be unfit for the investigation of obtained materials. The utmost reason for that was the presence of a layer of contaminations which prevented a proper electrical current flow between electrical contacts and prevented us from obtaining reliable data. While the macroscopic technique was not sufficient, a microscopic technique, the LC-AFM, was more dedicated for the investigation of the system. The magnetron sputtering was the method for the thin film production. Inves- tigated SmNiO3 films were deposited on silicon Si(100) substrate. Due to variable deposition conditions such as plasma composition and deposition time as well as post-processing treatment, the obtained films varied in terms of thickness, 117PDF Image | Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films
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