Two-Dimensional Borophene

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Two-Dimensional Borophene ( two-dimensional-borophene )

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Research 7 1.2 1.0 0.8 0.6 0.4 0.2 0.0 –1.0 1.5 1.0 0.5 Ag(111) 0.0 –0.5 0.0 Sample bias (V) (a) 1.0 1.0 0.5 –1.0 –0.5 Sample bias (V) Figure 6: (a) The scanning tunneling spectroscopy (STS) current-voltage curves of borophene and (b) the scanning tunneling spectroscopy dI/dV spectra of borophene. Reprinted with permission from Ref. [25]. Copyright 2015 American Association for the Advancement of Science. electron density, σ, which does not depend on the Fermi level, in the near-visible range, opening a door to extend the plasmon energy [17]. The lattice parameters of borophene are shown in Figures 7(a)–7(c), with the value of a=1:6212Å and b= 2:8699Å. The value difference between bottom and top atoms can be up to 0.89 Å. Fermi velocity plays an important role in electrical conductivity, the electron-phonon relaxa- tion time close to EF, and DOS at EF [47]. Figure 7(d) shows the electronic band structure, which reveals a priori and pow- erful anisotropic metallic feature as the bands are discovered to be deeply scattered in the kx direction (Γ-X and Y-S), accompanied large group velocity at the value of 6:6 ∗ 105 mpers. Figure 7(e) reveals that electronic bands can often pass the Fermi level if a line is parallel to kx ; however, it is dif- ferent to the lines that were parallel to ky. Thus, the predic- tion was that transport may only happen till the choosy wave vectors k whose kx constituent was in the permitted region. In the end, the recalculation and correction of the band structure were conducted by using the LDA method with ABI-NIT package and a one shot G0W0 approximation to the quasi particle problem. Kohn–Sham structure showed less different change to the G0W0 one. One can only realize an increase of the local bandgap at the Γ point and usually speaking an increase of the Fermi velocity [35, 47]. Mir et al. guess that due to the slight weight of boron, it may solidify electron-phonon combination; this may improve conventional, phonon-mediated superconductivity [17]. Boron reveals much more crossings through deeply dis- persed (almost parabolic) bands. It indicates that compared to metallic MX2 compounds, 2D boron owns a huge free charge shipper concentration [63]. Therefore, borophene may be very useful as an electrode material in the future [54]. Moreover, after oxidation, borophene remains metallic and the oxidized borophene has an enormous improvement on both optical conductivity and optical property [47]. 2.5. Semiconducting Properties. In recent years, due to the rapid development of the electronic industry, the traditional silicon technology can no longer meet the requirements of the semiconductors [64]. Hence, looking for a new semicon- ductor material to promote the development of the electronic industry is a crucial factor. Through research, Yang et al. found that borophene can form ideal contact with 2D semi- conductor and effectively reduce the contact resistance, which can further improve the related performance of 2D transistor [34]. Jie et al. studied experimentally and systematically that the tunnel barrier was nearly zero after borophene making effective contact with various 2D semiconductors. It is shown in Figures 8(a)–8(d). The valid channel barrier height is given as the barrier height difference that must be overcome when the Fermi energy of the carrier in the metal is the same as that of the heterostructure. As shown in Figure 8(e), all of the tun- nel barriers in the 2D layer in contact with borophene are zero, only graphene is 0.10 eV. Earlier findings have accorded that there is a tunnel barrier between the 2D material and bulk metal, so it can be seen that zero tunneling barrier is an irreplaceable favorable condition of borophene as a semi- conductor contact layer. The research on borophene is just beginning. With the development of the research on borophene, borophene not only has the above excellent properties but also may have novel atomic structure, excellent physical and chemical prop- erties, and more interesting quantum effects, providing more possibilities for borophene-based applications in the future. 3. Experimental Fabrications As is known to us all, a great challenge of fabricating boro- phene still exists due to the bonding configurations in bulk boron. Theoretically, a triangular lattice will be more stable if it has periodic holes [53, 65] and can grow on metal sub- strates, such as Ag(111) [66], Au(111) [67], and Cu(11) [68]. Owing to the metal passivation from stabilization of the sp2 hybridization and Al with the stabilization strategy of transferring one electron charge of Al to boron atom [69, 70], many researchers have synthesized atomically thin bor- ophene via chemical vapor deposition (CVD), bottom-up 1.5 –1 0 1 Homogeneous phase Rectangular lattice Striped phase Ag(111) Homogeneous phase Rectangular lattice Striped phase 0.0 0.5 (b) Current (nA) dl/dV (nS)

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