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Y. Yu, X. Wang / Extreme Mechanics Letters ( ) – 11 Fig. 8. (a) Schematic of charge redistribution between pristine PDMS and AlOx-doped PDMS films upon contact as a consequence of triboelectrification. (b) The Voc , (c) Jsc and (d) charge transfer amount under short-circuit condition (Qsc ) of TENGs built from PDMS with and without AlOx doping. The inset of Fig. 2(c) is the enlarged current output (dashed square box on Fig. 2(c)) generated by one pressing and releasing cycle. (e) Normalized Voc of TENGs as a function of the material thickness that was polished off. Voltage output of AlOx -doped PDMS film without any polishing was defined as unit. Insets are Al element EDS mapping of AlOx -doped PDMS films before (left) and after (right) ∼5 μm polishing. (f) Voc variation versus the doping cycles of AlOx on PDMS film. Source: Reprinted with permission from Ref. [79]. © 2015, Wiley-VCH Similar to previously discussed two strategies, the SIS doping could also arbitrarily tune the electron affinity of triboelectric polymers and modulate the charge at- traction/repulsion ability. For the AlOx doping case, alu- minum oxide will lower the electron affinity of PDMS since AlOx is a triboelectric positive material with high ten- dency to lose electrons. As a consequence, electron would be injected from AlOx-doped PDMS to PDMS upon their frication, leading to a positively charged surface in the doped PDMS and negatively charged surface in the pris- tine PDMS (Fig. 8(a)). On the contrary, two PDMS films without modification could not induce such a charge re- distribution due to the identical surface potential. There- fore, the AlOx doping process should be able to signifi- cantly raise the TENG performance. Fig. 8(b)–(d) show the Voc , Jsc , and the total amount of charge transferred under short-circuit condition (Qsc ) of TENGs with two config- urations: PDMS–PDMS and PDMS-AlOx -doped PDMS. For pair of PDMS-AlOx-doped PDMS, the average peak val- ues of the Voc, Jsc, and Qsc reached 2.3 V, 2.2 μA/cm2 and 45 μC/m2, respectively, which were comparable to TENGs that built with typical triboelectric couples such as teflon–metal pair [15,17]. In comparison, only 0.3 V of Voc , 0.3 μA/cm2 of Jsc and 5 μC/m2 of Qsc were obtained for the untreated PDMS pair. One unique advantage of this SIS doping method is the simultaneous surface and bulk modification of the polymer’s electrical property. The bulk doping capability allowed that the performance gain of TENGs could survive even after polishing off 2 μm-thick polymer materials.PDF Image | Chemical modification of polymer surfaces for advanced triboelectric nanogenerator development
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