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Silicon Carbide (SiC) Background: In the early 1980s, GE ushered in a new era in energy conversion with the invention and realization of the Insulated Gate Bipolar Transistor (IGBT)1. Developed by GE, this power switching device would become the gateway for managing the flow of current for a very wide range of electrical systems. Today, a team of GE scientists is on the cusp of a new revolution in power management using a breakthrough material, silicon carbide (SiC). For IGBTs and predecessor switching devices, silicon (Si) has been the workhorse material. But recent advances in SiC are promising a better material that will set new standards of efficiency and performance. For more than two decades, GE has been a leader in SiC technologies. We’ve demonstrated the world’s best performance in power devices, advanced packaging and power electronic applications with this technology. Power devices are the critical components in electronics that regulate how power is delivered and used. For power generation sources like wind and solar energy, they convert energy into usable forms for homes and businesses. In hybrid vehicles, they manage the electricity running through electric motors that affects driving range. And for data centers, they control how well power is used by the large scale computer systems that manage mass volumes of data. GE business applications: GE already has begun commercializing new SiC-enabled products for some power supplies in Aviation and is actively developing applications for products across multiple GE businesses. We’re even launching a new start-up business to sell SiC into applications beyond GE, and a manufacturing partnership will enable us to supply high volumes of SiC devices. This will help to reduce overall costs and enable more widespread commercialization of the technology. Future GE product applications include: smaller, more compact power devices to meet the increasing electricity needs of airplanes; more efficient conversion devices in applications like solar inverters to reduce power losses for solar and wind generation by half; new applications in hybrid electric vehicles that extend driving range by 10%; new solutions for healthcare imaging systems such as in MRI gradient drives for improved image quality and smaller footprint; more efficient tractions drives for GE Transportation; and enabling more efficient motors for oil and gas production. To accelerate needed advancements, GE has become a lead industry partner in New York State’s Power Electronics Manufacturing Consortium. GE is partnering with State University of New York (SUNY) Polytechnic Institute to build the world’s most advanced fabrication line for manufacturing SiC power devices. The new Albany-based fab will employ GE’s proprietary technology to develop and produce best-in-class SiC devices that will revolutionize the power electronics industry. GE is contributing in excess of $100mm in IP and value to the consortium. To scale up the technology and reduce fabrication costs, manufacturing must move from the current industry standard of 4" wafers size to 6" wafers. The Albany Fab will be set up for 6" wafer production with the ability to increase to 8". The GE Store difference: Because of their clear line of sight to all of GE’s business needs, GE researchers are developing revolutionary technology that will span several GE business applications. And much like we are doing with the GE – Fuel Cells start-up, we have the technical depth and industry breadth to build up a whole new business to serve the industry more broadly. 1. B. J. Baliga, “Fast-switching insulated gate transistors”, IEEE Electron Device Letters, Vol. EDL-4, pp. 452-454, 1983. 3PDF Image | GE Store for Technology
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