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Figure 3. Proposed Mechanism (A–H) (A) Si doping type/surface resistivity-dependent photo-response. Band diagram of (B) metal/p-Si (0.1–1 U cm) contact under open-circuit conditions. Downward surface band bending in the surface charge region (SCR) results in negative VOC; metal/Si contact with upward surface band bending in SCR under (C) open circuit, illumination; (D) short circuit, illumination; (E) open circuit, friction; (F) short circuit, friction; (G) open circuit, friction + illumination; (H) short circuit, friction + illumination. A strong synergetic effect exists between the photo-excitation and the interfacial electronic excitation at the sliding contact. C.B., conduction band; V.B., valence band; EF,m, Fermi-level of metal and Si(EF,m). Probability of the energy distribution of the excited interfacial electrons (P). states. From the experimental results in Figure 3A, it can be inferred that the pinned surface potential position is slightly lower than the median level of the forbidden band. Under short-circuit conditions, the photo-carrier conduction in the MIS system is illustrated in Figure 3D. The e-h pairs are excited by photon, separated by the elec- tric field E in the SCR (drift-diffusion transport), and undergo quantum tunneling through the thin oxide layer. In tribo-tunneling transport, electronic excitation is induced by frictional energy, re- sulting in dynamic surface dipole formation (Figure 3E).17,26 In our previous work, it is found that the tribo-tunneling Vtribo is always positive with the stainless steel probe, regardless of the doping type/concentration.17 Therefore, the direction of Vphoto needs to be in line with the direction of tribo-tunneling Vtribo in order to trigger the synergetic effect. It is proposed that tribo-tunneling VOC is confined at the metal/ox- ide friction interface rather than in the depletion region of Si, which may explain the doping-sensitive Vphoto and the doping-insensitive Vtribo. Under short-circuit condi- tions, energetic electrons with sufficient energy to overcome the Schottky barrier may tunnel through the oxide, resulting in d.c. tunneling current (Itribo). Thereafter, the electrons will get swept into the SCR region via drift-diffusion transport, which is analogous to thermionic emission in a metal-semiconductor contact.32,33 When both friction and illumination are present, one may expect a synergetic effect as illustrated in Figures 3G and 3H. The tribo- and photo-induced electric fields E may interact with each other, enhancing the carrier lifetime both for the tribo- charges and photo-charges as shown in Figures 2F and 2G. The estimation of the friction-induced E field should consider the VOC across the SiOx surface layer ($1.6 nm) rather than the depletion region thickness (in the order of 100 nm), which 654 Matter 1, 650–660, September 4, 2019PDF Image | Separation and Quantum Tunneling of Photo- generated Carriers Using a Tribo-Induced Field Boosting
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