PDF Publication Title:
Text from PDF Page: 011
crystallite in the U4 sample shows the better integrity between CTP and PAN at a lower amount of CTP e. g., 25% in the spinning dope. Raman spectroscopy was also carried out to investigate the influence of inclusion of CTP as an additive to the PAN spinning dope. As shown in Figure 8, a notable reduction in D-band (defect structure) was observed after increasing carbonisation temperature from 850 °C to 1200 °C. Higher Materials 2019, 12, 1281 11 of 14 intensity of G-band (graphitic structure) at 1200°C is attributed to the developing sp2 carbon atoms at a Figure 8. Raman spectra and D/G area ratios for carbonised PAN and CTP/PAN samples at different Figure 8. Raman spectra and D/G area ratios for carbonised PAN and CTP/PAN samples at different carbonisation temperatures (a–c); I /I ratios are the average of four different measurements (d). carbonisation temperatures (a–c); ID/IG ratios are the average of four different measurements (d). Low-temperature carbonisation of U0, U2 and U4 samples at 850 ◦C resulted in 1.06, 1.03 and Low-temperature carbonisation of U0, U2 and U4 samples at 850 °C resulted in 1.06, 1.03 and 0.97 ID/IG ratios, while carbonisation at 1200 ◦C reduced ID/IG ratios to 0.91, 0.90 and 0.94, respectively. 0.97 ID/IG ratios, while carbonisation at 1200 °C reduced ID/IG ratios to 0.91, 0.90 and 0.94, respectively. The lower ID/IG ratios denote that better graphitic structures were formed and CTP was integrated to The lower ID/IG ratios denote that better graphitic structures were formed and CTP was integrated to PAN graphitic structure more efficiently. The lowest ID/IG ratios belonged to U4 at low carbonisation PAN graphitic structure more efficiently. The lowest ID/IG ratios belonged to U4 at low carbonisation temperature and U2 at a high carbonisation temperature. This can be due to the thermal condition at a temperature and U2 ata high carbonisation temperature. This can be due to the thermal condition high temperature which made it challenging to incorporate a high load of CTP (50%) into PAN graphitic at a high temperature which made it challenging to incorporate a high load of CTP (50%) into PAN structure effectively. It is believed that the balance for CTP loading to contribute in graphitic structure is graphitic structure effectively. It is believed that the balance for CTP loading to contribute in graphitic 25% CTP at high temperature, and higher CTP loading e.g., 50% will result in creating a defect instead structure is 25% CTP at high temperature, and higher CTP loading e. g., 50% will result in creating a of a graphitic structure. In contrast, the thermal condition at a low carbonization temperature is more defect instead of a graphitic structure. In contrast, the thermal condition at a low carbonization suitable for high CTP loading to slowly integrate into a graphitic structure. In other words, as CTP temperature is more suitable for high CTP loading to slowly integrate into a graphitic structure. In contains highly developed polyaromatic rings, a higher intensity of sp2 carbon atoms was detected in other words, as CTP contains highly developed polyaromatic rings, a higher intensity of sp2 carbon the U4 sample at low temperatures. However, carbonization at high temperatures showed that the atoms was detected in the U4 sample at low temperatures. However, carbonization at high polyaromatic rings are more subjected to create defect carbons instead of generating more graphitic temperatures showed that the polyaromatic rings are more subjected to create defect carbons instead carbons and ID/IG ratio of U4 at 1200 ◦C is slightly higher than the U0 and U2 samples. Alternatively, of generating more graphitic carbons and ID/IG ratio of U4 at 1200 °C is slightly higher than the U0 U4 may require different thermal profiles (such as longer carbonising times but lower temperature) to and U2 samples. Alternatively, U4 may require different thermal profiles (such as longer carbonising optimise its graphitisation, which in turn can compromise low-cost carbon fibre concept. times but lower temperature) to optimise its graphitisation, which in turn can compromise low-cost carbon fibre concept. 3.4. Electrical Resistivity 3.4. EPlietcthri-cbaalsRedesiCstFivsiatyre often known to have higher electrical and thermal conductivity compared to PAN-based CFs. We have investigated the effect of CTP on electrical resistivity of PAN CFs. The sheet resistivity of the carbonised samples is shown in Figure 9. As seen, electrical resistivity significantly reduced when carbonisation temperature increased from 850 ◦C to 1200 ◦C. For example, the electrical resistivity of U0 at 850 ◦C is about 20 kΩ/sq while this value dropped to 0.036 kΩ/sq at 1200 ◦C. Such a trend was also observed for the U2 and U4 samples in which the electrical resistivity reduced around 136 and 140 fold, respectively, by increasing the carbonisation temperature. When it comes to thePDF Image | Low-Cost Carbon Fibre Derived from Sustainable Coal Tar Pitch and Polyacrylonitrile
PDF Search Title:
Low-Cost Carbon Fibre Derived from Sustainable Coal Tar Pitch and PolyacrylonitrileOriginal File Name Searched:
6e63fb65b81e089e97ddfbe19bee7d22311e.pdfDIY PDF Search: Google It | Yahoo | Bing
Sulfur Deposition on Carbon Nanofibers using Supercritical CO2 Sulfur Deposition on Carbon Nanofibers using Supercritical CO2. Gamma sulfur also known as mother of pearl sulfur and nacreous sulfur... More Info
CO2 Organic Rankine Cycle Experimenter Platform The supercritical CO2 phase change system is both a heat pump and organic rankine cycle which can be used for those purposes and as a supercritical extractor for advanced subcritical and supercritical extraction technology. Uses include producing nanoparticles, precious metal CO2 extraction, lithium battery recycling, and other applications... More Info
| CONTACT TEL: 608-238-6001 Email: greg@infinityturbine.com | RSS | AMP |