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4.20: Chemical structure of tris(2,2,6,6-tetramethyl-3,5-heptanedionato)neodymium (III), Nd(tmhd)3, bis(2,2,6,6-tetramethyl-3,5-heptanedionato)nickel (II), Ni(tmhd)2, bis(cyclopentadienyls)nickel, NiCp2 or nickelocene, and tris(cyclopentadienyls)neodymium, NdCp3 ......................................................114 4.21: XPS survey scan of an Nd/Ni co-deposited film. Ni 3p and 2p peaks are strong while Ni 3d peaks are relatively weak. Reactions conditions: cold wall reactor, T = 265 oC, 193 bar, 0.214 Ni(tmhd)2 wt. %, 0.211 Nd(tmhd)3 wt. %, 0.432 hydrogen wt. % and 30 min reaction time.........................................................116 4.22: XPS spectra of Nd 3d (left) and Ni 2p (right) finger print regions for a Nd/Ni co- deposited sample. Reactions conditions: cold wall reactor, T = 300 oC, 193 bar, 0.106 Ni(tmhd)2 wt. %, 0.119 Nd(tmhd)3 wt. %, 0.518 hydrogen wt. % and 30 min reaction time...............................................................................................117 4.23: XPS sputter depth profile of an Nd/Ni co-deposited film. High purity nickel is deposited with trace amounts of neodymium. Reactions conditions: cold wall reactor, T = 265 oC, 193 bar, 0.214 Ni(tmhd)2 wt. %, 0.211 Nd(tmhd)3 wt. %, 0.432 hydrogen wt. % and 30 min reaction time...............................................117 4.24:Chemical structure of di(isopropoxide)bis(2,2,6,6-tetramethyl-3,5- heptanedionato) titanium (IV), Ti(tmhd)2(iPr)2 and tetra(2,2,6,6-tetramethyl-3,5- heptanedionato)hafnium, Hf(tmhd)4..................................................................120 4.25: Procedure for creating mutli-layer sequentially smaller circular film stacks via SFD, specifically Ru/HfO2/Ru ..........................................................................122 4.26: XPS sputter depth profile of a Ru/TiO2/Ru stack confirming all components of the stack. However, layer definition is lost with increased sputter cycles (moving from top of the stack towards the substrate)......................................................124 4.27: FE-SEM image of a Ru/TiO2/Ru stack. Non uniform growth of TiO2 is observed (left). The lower Ru and TiO2 interface is less defined than the upper interface (right) .................................................................................................................125 4.28: XPS sputter depth profile of a Ru/HfO2/Ru stack confirming all components of the stack. Well defined stack layers are noted..................................................126 4.29: FE-SEM image of a Ru/HfO2/Ru stack. Stack interfaces are visible and labeled (left). Image showing conformal deposition of the Ru/HfO2/Ru across the complex substrate surface..................................................................................126 4.30: Top-down image of a Ru/HfO2/Ru stack after all depositions are completed.....127 5.1: Schematic representation of the PRESS system – first design ............................144 xxiPDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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