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redistribution of doped molecules. In addition, argon atoms are typically incorporated into the deposited film. This process is also a line of sight deposition which causes shadowing in high aspect ratio features. The shadowing causes uneven film formation and eventually seals off the tops of deep trenches and vias. The advantage of PVD is the deposition of alloys which is as simple as making the target the same composition as the film desired. This process can also be used in the reverse manner, called sputter etching. This is used to clean substrates prior to film deposition. Electron beam deposition is similar to evaporation; however, instead of increasing the temperature of the target with a filament, the temperature of the target is increased by an electron beam with energy up to 15 keV. This allows for the evaporation of the target and then deposits a thin film on the surface of the substrate. This method suffers from the same disadvantages that evaporation and sputtering have, line of sight deposition. Inconsistent target depths, due to target evaporation, also cause uneven deposition rates. This is offset by the ability for high through put processing due to controllable deposition rates up to the order of 10 mm/min. 1.3.4 Chemical Vapor Deposition Chemical vapor deposition (CVD) is the process by which the thermal decomposition or reaction of gaseous compounds forms a thin film on the surface of a substrate. This process deposits the desired material directly from the gas phase onto the substrate. CVD is performed at a pressure which results in the mean free path of the deposited material being relatively small, resulting in a non line of sight deposition. Due 8PDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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