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to the high temperatures (150 – 2200 oC) required for this process in addition to the non line of sight process, exceptional step coverage can be achieved, in principle, for even the most complex geometries.4 However, due to precursor solubility limitations, this is not the case. The precursor solubility in the CVD process is limited by precursor vapor pressure, which ultimately results in lower solubility as compared to liquid phase deposition techniques. Due to this, precursors are being synthesized to increase the vapor pressure to alleviate this concentration issue for CVD. However, the use of complex ligand systems increases the contamination of the interface of the deposited film during deposition leading to another drawback of CVD, poor film adhesion. Additionally, the high temperature process limits the substrates able to withstand the deposition process as well as causing mechanical stress build up in the film which leads to device failure. Regardless of its setbacks, CVD is a widely accepted technique and used in a multi- billion dollar per year industry. It is important to mention the specific are of CVD used for metal deposition which is closely related to the topics discussed in this dissertation, called metalorganic chemical vapor deposition, MOCVD. MOCVD is a process where the metal atom is bound to an organic compound which increases the solubility in the gas phase and which promotes the thermal decomposition of the organometallic compound and thus the deposition of the metal. This process is used for a wide range of metals including, but not limited to, Mo, Ta, Ti, W, Ru, Cu, Pt, Pd and many more.5-11 9PDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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