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1.3.5 Atomic Layer Deposition Atomic layer deposition (ALD) is similar to CVD in that it is a gas phase deposition process but at very low concentrations and is repeated numerous times. It requires alternating precursor gas exposure for self-limited reactions to form films. However, the films deposited have precise composition, conformal coverage, exceptionally high interfacial adhesion and thickness control on the angstrom level. ALD, although a candidate for conformal films with precise composition control, is only an effective solution at thicknesses of 10 nm or less due to the amount of time required to deposit the films. For thicker films, significantly longer processing times are required, thus making it unsuitable for industrial integration. 1.4 Supercritical Fluid Deposition Supercritical fluid deposition (SFD) is a hybrid process that combines both vapor and liquid phase deposition characteristics in order to reduce organometallic compounds with hydrogen or other reducing agents in the presence of a supercritical fluid as the solvent, typically carbon dioxide. Vapor phase depositions are limited by precursor solubility. For instance, the CVD process is limited by the vapor pressure of the precursor.12 However, in the liquid phase, like electroless plating, the concentration of precursor can be quite high. SFD uses a supercritical fluid as the solvent and enables a solubility which is orders of magnitude higher than CVD. To date, many metals have been deposited from the SFD process, some of which include: Au, Cu, Co, Ni, Ir, Rh, Ru, Pd, Pt.13-30 10PDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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