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CHAPTER 2 DEPOSITION KINETICS OF BIS(2,2,6,6-TETRAMETHYL-HEPTANE-3,5- DIONATO)(1,5-CYCLOOCTADIENE)RUTHENIUM(II) 2.1 Introduction The preparation of nanostructured elements for future generations of microelectronic and optoelectronic devices will require the deposition of high purity, conformal, metal thin films within narrow (<100 nm) and/or high aspect ratio (>10) features. For example, microprocessors are predicted to operate at the 45 nm node as early as 2010.1 Ruthenium’s characteristic properties (ρ = 7.2 μΩ-cm at 25 °C, 6.5 on Moh’s scale, Tm = 2427 °C and equivalent oxide thickness (EOT) of less than one) make this an ideal candidate for complementary metal-oxide semiconductor (CMOS) gates. In addition, ruthenium characteristics make it a viable option for dynamic (DRAM) and nonvolatile ferroelectric (FeRAM) random access memory electrodes.2, 3 Additional applications include conductive diffusion barrier layers for copper interconnects in semiconductors. Ruthenium has typically been deposited by physical vapor deposition (PVD), chemical vapor deposition (CVD) or atomic layer deposition (ALD) using a wide range or precursors.4-28 Line of sight limitations for most PVD techniques present difficulties when conformal deposition within high aspect ratio features is needed. ALD yields excellent step coverage, but sub-monolayer deposition thickness per reaction cycle presents deposition rate challenges for films beyond a few nanometers in thickness. Ruthenium films deposited via CVD can contain high levels of impurities due to ligand 18PDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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