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decomposition products. CVD environments are also typically oxidizing, which can lead to high levels of oxygen contamination in the film or in the seed layer, like Ta.29 In addition, due to precursor vapor pressure limitations, conversion is typically less than 10 % and the CVD process is mass transfer limited.30, 31 Thus the deposition of conformal films in high aspect ratio features via CVD remains a challenge. Recently, excellent step coverage for the deposition of conformal ruthenium films deposited within complex geometries using supercritical fluid deposition (SFD) under reducing conditions was reported. In that study, the hydrogen assisted reduction organoruthenium complexes, including triruthenium dodecacarbonyl (Ru3(CO)12), tris(2,2,6,6-tetramethyl-heptane-3,5-dionato)ruthenium (Ru(tmhd)3), and bis(2,2,6,6- tetramethyl heptane-3,5-dionato)(1,5 cyclooctadiene) ruthenium (Ru(tmhd)2cod) yielded highly reflective thin films with resistivities as low as 22 μΩ cm for a 33 nm thick film and excellent step coverage of high purity films was achieved within 200 nm x 300 nm trenches on patterned tantalum-coated surfaces and within 2 μm x 30 μm and 300 nm x 1.2 μm via structures on etched silicon substrates32 SFD is a hybrid approach to reactive metal deposition that combines the advantages of solution-based processes, namely high precursor concentration and the elimination of precursor volatility constraints, with those of a vapor phase techniques, namely favorable transport properties and the absence of surface tension. High fluid phase precursor concentrations are important because they can yield conformal coverage if deposition kinetics can shifted to into regimes of surface reaction rate control. To date, a number of metal films have been deposited using SFD, which include Cu, Au, Ag, Pt, Pd, Ni, Rh, Ru, Co, Ir and alloys.32-46 While the utility of SFD, especially for conformal films, is established, there are few kinetic studies of the 19PDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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