Supercritical Fluid Deposition Of Thin Metal Films

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Supercritical Fluid Deposition Of Thin Metal Films ( supercritical-fluid-deposition-of-thin-metal-films )

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Ru O O O O Figure 2.3: Ruthenium precursor, bis(2,2,6,6-tetramethyl-heptane-3,5-dionato)(1,5- cyclooctadiene)ruthenium(II), Ru(tmhd)2cod, used for supercritical fluid deposition kinetics study. 2.2.3 Procedure For a typical reaction, a 12 mm by 12 mm silicon <100> wafer, with a 500 nm thermally grown oxide layer, is mounted to the aluminum heated stage and secured with two clips. A known amount of precursor is loaded into the vessel. The vessel is then sealed and placed behind protective polycarbonate housing. Then, using a constant flow of nitrogen, the reaction vessel is purged continuously over a 15 minute period. The reactor wall is then heated to the desired temperature and allowed to equilibrate (t = 60 min.). Carbon dioxide is introduced into the reactor using a computer-controlled syringe pump (Teledyne Isco, Inc., Lincoln, NE), which enables precise volume measurement of the added CO2. A suitable amount of time is allowed for complete dissolution of precursor47 (t = 60 min.), Figure 2.4, in the convection dominated flow48 of the supercritical CO2 in the reactor. Figure 2.4 shows dissolution time of Ru(tmhd)2cod precursor into carbon dioxide at 75, 100, 125 oC. Precursor is loaded into the reactor and 24

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