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Supercritical Fluid Deposition Of Thin Metal Films

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Supercritical Fluid Deposition Of Thin Metal Films ( supercritical-fluid-deposition-of-thin-metal-films )

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35 30 25 20 15 10 5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 COT Concentration (wt.%) Figure 2.20: Growth rate dependence upon cot concentration. Reaction conditions: 260 °C, 0.09 wt. % Ru(tmhd)2cod, 0.3 wt. % hydrogen, 3 minutes heating. Cot has a weak negative effect on growth rates between 0 wt. % - 0.9 wt. %. 2.3.3 Equilibrium and Mechanism In 1995, Hampdensmith and Kodas30, 31 described the CVD of metal films as an eight step process. From experimental findings, it is believed that this is very similar to what is occurring in the SFD process. It is then advantageous to then use this overview of the CVD process as a starting point for developing the kinetics behind the deposition of ruthenium films from supercritical fluids. In a kinetic study performed by Dey, et al.56 in 2003, a low pressure, horizontal MOCVD hot wall reactor was used to study the deposition of ruthenium from the oxygen-assisted pyrolysis of Ru(tmhd)2cod by liquid-source MOCVD. The depositions were conducted on HfO2/SiO2/Si substrates between temperatures of 250 – 320 °C. The 43 Growth Rate (nm/min)

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