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precursor is studied. Reaction rate orders are determined as well as proposing a Langmuir – Hinshelwood deposition mechanism. It is found that the apparent activation energy is 45.3 kJ/mol over the temperature range of 240 °C to 280 °C. The dependence of precursor concentration on growth rate is found to be first order for concentrations less than 0.06 wt. % and zero order for concentrations higher than 0.06 wt. %. Zero order deposition kinetics is an enabling feature of SFD that provides conformal film deposition in high aspect ratio and topographically complex features. It is also determined that reaction pressure has no effect on the growth rate over a large process window of 135 bar to 200 bar. Hydrogen concentration is studied and found to have a 2nd order effect on growth rate for concentrations less than 0.26 wt. % and a zero order effect on concentrations above that. Precursor decomposition products (tmhd, cod and cot) are studied. Tmhd and cod are shown to have a negative 1st order effect on film growth which is attributed to their competition for surface active sites thereby decreasing the probability of a successful surface reaction. Cot shows negligible negative effects on growth rate which is attributed to cot having no affinity for the surface. The surface reaction is found to be rate determining. 2.5 (1) (2) (3) (4) References International Technology Roadmap for Semiconductors, http://www.itrs.net/, 2007 R. Chan, T. N. Arunagiri, Y. Zhang, O. Chyan, R. M. Wallace, M. J. Kim, T. Q. Hurd, Electrochemical and Solid-State Letters 2004, 7, G154-G157. C. Cheng, T. Arunagiri, O. Chyan, American Journal of Undergraduate Research 2003, 2, 11-18. T. Aoyama, K. Eguchi, Japanease Journal of Applied Physics 1999, 38, L1134- L1136. 48PDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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