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CHAPTER 3 THIN FILM ADHESION AND FOUR-POINT BEND FRACTURE MECHANICS 3.1 Introduction In the semiconductor industry, copper is currently the industry standard material used for interconnects in advanced integrated circuits (IC). Originally, aluminum was used because it is cheap and easy to pattern. However, as dimensions were reduced, lower resistances were needed for interconnect material to compensate for reduced current. Additionally, aluminum has a lower electromigration resistance and an increased surface roughness as compared to copper, both of which are problematic for ICs. This made for a quick transition to copper since the ICs in production have deep sub-micron features which greatly benefited from higher electromigration resistance and lower electrical resistance. The introduction of copper itself, however, is not without complication as it has a high diffusivity in semiconductors, like Si, which ultimately degrades and destroys the IC. This necessitates the use of a barrier layer, typically TaN. Copper is also easily oxidized and does not self-passivate thereby limiting further oxidization. Finally, the adhesion of copper is poor to most other materials, most importantly, TaN. This presents a reliability issue for ICs that must be addressed through the use of interfacial adhesion enhancement methods if the copper interconnects are to withstand chemical mechanical planarization (CMP) used in the dual damascene process. The production of copper interconnects for IC is a two step process. Initially, the deposition of a Cu seed layer by sputtering, a common type of physical vapor deposition (PVD), is performed. Next, electrochemical deposition is used to perform a bottom-up 53PDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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