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fill of the interconnect trench. Due to PVD being a line of sight technique, it is difficult to sputter conformal and defect free copper seed layers in trenches as device dimensions are reduced below the 32 nm node. Subsequent electrochemical filling of these features can create voids that cause high resistance and open circuits. While the two step PVD seed layer – electrochemical fill process has been adapted to meet the demands of current interconnect dimensions, there are serious concerns that this approach will fail to do so in the future. Consequently, an alternative solution is needed. Other deposition techniques include atomic layer deposition (ALD), chemical vapor deposition (CVD) and supercritical fluid deposition (SFD). Although CVD can in principle be used to deposit conformal copper, it fails to do so in high aspect ratio feature. Additionally, it suffers from both inefficient consumption of the precursor and poor adhesion.1, 2 Low precursor conversion is attributed to low precursor concentrations, which is a function of the low precursor vapor pressure. Poor adhesion is attributed to contamination of the interface between the trench (barrier layer) and the deposited copper. Contamination is from precursor byproducts of the reaction, typically the ligand, and from oxidation of the barrier layer.1-4 ALD is a CVD variant using alternating precursor gas exposure for self-limited reactions to form films with precise composition, conformal coverage, exceptionally high interfacial adhesion and thickness control on the angstrom level. ALD, although a candidate for conformal films with precise composition control, is only a time effective solution at sub-monolayer thicknesses requiring significantly longer processing times for thicker films, thus making it unsuitable for industrial integration. Additionally, ALD provides no solution for the important Cu/Ta/TaN seed/barrier layer formation used for ICs.5-9 SFD presents a unique 54PDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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