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solution for the single step, rapid and conformal deposition of films in high aspect ratio features with near complete precursor conversion. Unfortunately, films deposited with this method still have weak adhesion from oxidation at the barrier during deposition. It is the focus of this study to outline current progress in increasing interfacial adhesion of copper to barrier layers, of which SFD specific solutions have been identified, and to explore quantitative methods of analyzing this increased adhesion. This enhances the likelihood that a single step process for the efficient and conformal filling of Cu into Ta/TaN for seed/barrier systems of high aspect ratios can seamlessly be integrated into the microelectronics industry. There are a variety of reasons why poor adhesion is experienced with deposited films. As mentioned previously, the reaction chemistry used has a significant effect on the adhesion of deposited films. With methods like CVD and SFD, which use reduction chemistry, significant contamination can occur at the interface, which reduces adhesion. The precursors used in SFD and CVD typically have a hydrocarbon or fluorine based ligand that is chelated to a metal core. The purpose being that the ligand increases the solubility of the metal in whichever medium used.10-12 The reduction reaction reduces the ligands and leaves behind the metal center for deposition1, 2, typically modeled after Langmuir – Hinshelwood kinetics. However, the reduced ligands are trapped at the interface and reduce the number of sites for bonding, thereby decreasing adhesion. Additional causes of poor adhesion include process defects and oxidation at the interface. Process defects, typically gaps and cracks formed by stress, greatly reduce adhesion. Oxidation is an important aspect of adhesion that is usually overlooked. By directly addressing the oxidation at the interface, it is possible to increase the number of 55PDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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