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bend geometry is S = 20 mm and L = 8 mm. 4 samples are tested at each condition for statistical information. The energy release rate G to drive the crack along the Cu/TaN interface under these conditions is taken to be the adhesion energy of the interface, with G calculated using the following, 47 21P2L2 (1−ν2 ) G= 16Eb2h3 , where P is the steady load taken as the average value over the plateau region in the load-displacement curve after the major load drop, b is the width and h is the half thickness of the sample. E = 168.9 GPa and v = 0.064 are the Young’s modulus and Poisson’s ratio of Si as appropriate for the crystallographic orientation of the samples. Figure 3.5: Schematic and force diagram for four point bend technique. 3.3 Results Copper films are deposited by the hydrogen assisted reduction of Cu(tmod)2 in supercritical carbon dioxide on TaN barriers. The barrier layers are treated with PAA, a known interfacial adhesion enhancer for copper deposited by SFD, prior to deposition. 65PDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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