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During mechanical testing, the load-versus-displacement curves show a common trend with a major load drop, which is consistent with four-point bend tests. This load drop occurs as the precut notch initiates the interfacial crack. More often than not, the initiation of interfacial crack is asymmetric and the crack will propagate down one side of the sample initially. If the sample does not break, the energy will be enough to begin a crack that propagates down the other side of the sample. This is evident when a second major energy drop occurs, which corresponds to the crack propagating into the other side of the sample. As the crack propagates, the load begins with a plateau regime during which the energy release rate remains constant. The crack arrests as it approaches the inner loading pins, manifested as a steady increase of load without further crack extension. A broken sample, in which the crack does not propagate into the interface but instead the entire stack immediately fails indicates superior adhesion, as the crack always chooses a path with minimum energy dissipation. If the intended interface is sufficiently tough, it is energetically more favorable to propagate through the film then bulk silicon substrate, than along the tough interface. An increase in the growth rate is observed for copper deposited on substrates that are pretreated with PAA versus those that are not pretreated. It is proposed that the increase in growth rate for PAA pretreated copper films is due to the higher number of available surface sites for reaction during the deposition. This is due to the etching and cleaning of oxides and contaminants by the PAA as it degrades. 73PDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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