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3.5 Conclusions A fivefold increase in adhesion is observed for PAA pretreated Cu/TaN interfaces in which the copper films are deposited by the hydrogen assisted reduction of bis(2,2,7- trimethyloctane-3,5-dionato) copper in supercritical carbon dioxide. The pretreatment of PAA is done via spin coating and the remaining 15 nm layer at the interface becomes sacrificial at the reaction conditions used, leaving behind no trace of the PAA. The resulting average interfacial adhesion energy is 5 J/m2, which meets adhesion standards in the semiconductor industry. The adhesion measurements are performed with a custom built four-point bend fracture mechanics testing system. Film thickness is found to have no affect on the adhesion energy. Finally, the growth rate of copper during deposition is higher on surfaces pretreated with PAA due to the increased availability of surface sites for the reduction reactions. 3.6 References (1) M. J. Hampden-Smith, T. T. Kodas, Chemical Vapor Deposition 1995, 1, 8-23. (2) M. J. Hampden-Smith, T. T. Kodas, Chemical Vapor Deposition 1995, 1, 39-48. (3) S. Voss, S. Gandikota, L. Y. Chen, R. Tao, D. Cong, A. Duboust, N. Yoshida, S. Ramaswami, Microelectronic Engineering 2000, 50, 501-508. (4) S. Gandikota, S. Voss, R. Tao, A. Duboust, D. Cong, L. Y. Chen, S. Ramaswami, D. Carl, Microelectronic Engineering 2000, 50, 547-553. (5) H. Kim, Journal of Vacuum Science & Technology B 2003, 21, 2231-2261. (6) A. Furuya, M. Tagami, K. Shiba, K. Kikuta, Y. Hayashi, Ieee Transactions on Electron Devices 2002, 49, 733-738. (7) J. S. Park, M. J. Lee, C. S. Lee, S. W. Kang, Electrochemical and Solid State Letters 2001, 4, C17-C19. 74PDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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