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Table 4.1: Table of reaction conditions for experiments CoPt1 – CoPt15. Sample CoPt1 CoPt2 CoPt3 CoPt4 CoPt5 CoPt6 CoPt7 CoPt8 CoPt9 CoPt10 CoPt11 CoPt12 CoPt13 CoPt14 CoPt15 Reactor Hot Wall Hot Wall Cold Wall Cold Wall Cold Wall Cold Wall ColdWall ColdWall ColdWall HotWall HotWall HotWall HotWall Hot Wall Hot Wall Pt Pt(Me)2cod Pt(Me)2cod Pt(Me)2cod Pt(Me)2cod Pt(Me)2cod Pt(Me)2cod Pt(Me)2cod Pt(Me)2cod Pt(Me)2cod Pt(Me)2cod Pt(Me)2cod Pt(Me)2cod Pt(Me)2cod Pt(Me)2cod Pt(Me)2cod Precursors wt. % 0.407 0.544 0.301 0.311 0.250 0.194 0.216 0.213 0.085 0.128 0.207 0.065 0.072 0.451 0.293 Hydorgen wt. % 0.515 0.854 0.259 0.402 0.488 0.403 0.345 0.288 0.432 0.483 0.439 0.483 0.439 0.438 0.527 Reaction T oC 150 150 250 250 250 300 300 75 60 40 60 60 60 60 60 Co CoCp2 CoCp2 CoCp2 CoCp2 CoCp2 CoCp2 Co(tmhd)3 Co(tmhd)3 Co(tmhd)3 Co(tmhd)3 Co(tmhd)3 Co(tmhd)3 Co(tmhd)3 CoCp2 CoCp2 wt. % 0.458 0.519 0.303 0.280 0.250 0.247 0.392 0.389 0.156 0.237 0.378 0.375 0.389 0.256 0.163 4.2.1.3 Conclusions Cobalt and platinum are successfully co-deposited onto TaN capped silicon wafers using CoCp2 as the cobalt source and Pt(Me)2cod as the platinum source in a hot wall reactor at both 60 oC and 150 oC. Platinum only deposition or no deposition in the cold wall reactor is attributed to parasitic deposition to the heated sample stage and wall. The tmhd ligand in Co(tmhd)3 is etching the cobalt during deposition resulting in high purity platinum films being deposited. Finally, XRD is used to analyze the crystal structure of the deposited film and alloying of the cobalt and platinum is not observed. 90PDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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