Supercritical Fluid Deposition Of Thin Metal Films

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Supercritical Fluid Deposition Of Thin Metal Films ( supercritical-fluid-deposition-of-thin-metal-films )

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OO OO Ce OO OO Figure 4.9: Chemical structure of Tetrakis(2,2,6,6-tetramethyl-3,5- heptanedionato)cerium (IV), Ce(tmhd)4. 4.2.2.1.3 Procedure Both hot and cold wall reactors are used to experiment with different precursor systems and pressure and temperature ranges. For a typical reaction in the cold wall reactor, the substrate is mounted to the aluminum heated stage and secured with clips. A known amount of precursor is loaded into the vessel. Reaction conditions are listed in Table 4.2. The vessel is sealed and placed behind protective polycarbonate housing. Then, using a constant flow of nitrogen, the reaction vessel is purged continuously over a 30 minute period. The reactor wall and stage are then heated to the desired preheating temperature (typically 60 oC) and allowed to equilibrate (t = 60 min.). Carbon dioxide is introduced into the reactor using a computer-controlled syringe pump. The reactor is then heated to a higher temperature (typically 150 oC) to induce quicker dissolution of precursor into the CO2 (t = 60 min.). The reactor is then cooled down to the original preheating temperature (t = 60 min.). Next, hydrogen is loaded into the system using a manifold of known volume (70 mL). The aluminum stage is then quickly heated (~ 15 s.) to the desired reaction temperature (typically 300 oC) and maintained for a set time. The heated stage is then allowed to cool 93

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