Supercritical Fluid Deposition Of Thin Metal Films

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Supercritical Fluid Deposition Of Thin Metal Films ( supercritical-fluid-deposition-of-thin-metal-films )

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OO Nd Figure 4.20: Chemical structure of tris(2,2,6,6-tetramethyl-3,5- heptanedionato)neodymium (III), Nd(tmhd)3, bis(2,2,6,6-tetramethyl-3,5- heptanedionato)nickel (II), Ni(tmhd)2, bis(cyclopentadienyls)nickel, NiCp2 or nickelocene, and tris(cyclopentadienyls)neodymium, NdCp3. 4.2.4.1.3 Procedure For a typical reaction, a 2” <100> silicon wafer is mounted to the aluminum heated stage and secured with clips. A known amount of precursor is loaded into the vessel. The vessel is sealed and placed behind protective polycarbonate housing. Then, using a constant flow of nitrogen, the reaction vessel is purged continuously over a 30 minute period. Simultaneously, the reactor wall and stage are then heated to the desired preheating temperature. Carbon dioxide is introduced into the reactor using a computer- controlled syringe pump. The reactor is then heated and maintained at a higher temperature to induce quicker dissolution of precursor into the CO2 (t = 60 min.). Next, hydrogen is loaded into the system using a manifold of known volume (70 mL). The aluminum stage is then quickly heated (~ 15 s.) to the desired reaction temperature and maintained for a set time. The heated stage is then allowed to cool down (~ 15 s.) while fresh CO2 is used to flush multiple reactor volumes through the system to remove reaction byproducts and unreacted precursor. The effluent is passed through an activated carbon bed and silicon oil bubbler before being vented to the atmosphere. OO Ni Ni Nd O O O OOO 114

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