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5600 5400 5200 5000 4800 4600 4400 4200 4000 1025 1020 1015 1010 1005 1000 Binding Energy (eV) 12000 11000 10000 9000 8000 7000 6000 5000 4000 3000 2000 895 890 885 995 990 985 980 975 880 875 870 Binding Energy (eV) 850 845 Figure 4.22: XPS spectra of Nd 3d (left) and Ni 2p (right) finger print regions for a Nd/Ni co-deposited sample. Reactions conditions: cold wall reactor, T = 300 oC, 193 bar, 0.106 Ni(tmhd)2 wt. %, 0.119 Nd(tmhd)3 wt. %, 0.518 hydrogen wt. % and 30 min reaction time. 100 90 80 Nd3d Ni2p O1s C1s 70 Si2p 60 50 40 30 20 10 0 Figure 4.23: XPS sputter depth profile of an Nd/Ni co-deposited film. High purity nickel is deposited with trace amounts of neodymium. Reactions conditions: cold wall reactor, T = 265 oC, 193 bar, 0.214 Ni(tmhd)2 wt. %, 0.211 Nd(tmhd)3 wt. %, 0.432 hydrogen wt. % and 30 min reaction time. 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Sputter Time (min) 117 865 860 855 Atomic Concentration (%) c/s c/sPDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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