Supercritical Fluid Deposition Of Thin Metal Films

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Supercritical Fluid Deposition Of Thin Metal Films ( supercritical-fluid-deposition-of-thin-metal-films )

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4.3 Stacks via Layered Deposition The deposition of films via SFD has been demonstrated. This section advances the utility of the technique by presenting the fabrication method of the first nano-sized electronic device structures made via SFD deposition. This is achieved by repeated SFD deposition to fabricate layers, or stacks, useful in creating electronic devices, specifically capacitors. Ru is used as the top and bottom electrode while TiO2 and HfO2 are used as the dielectric layer of the capacitors. 4.3.1 Experimental 4.3.1.1 Equipment 4.3.1.1.1 Reactors The cold wall reactor used is previously described in detail in chapter 3. 4.3.1.2 Materials Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene) ruthenium (II), 99 %, (99.9 % Ru), Ru(tmhd)2cod, [329735-79-7] and di(isopropoxide)bis(2,2,6,6- tetramethyl-3,5-heptanedionato) titanium (IV), 98 %, Ti(tmhd)2(iPr)2, [144665-26-9] are obtained from Strem Chemicals, Inc. (Newburyport, MA), Figure 4.24. The ruthenium precursor is ground using a mortar and pestle and used without any further purification; the hafnium precursor is used as received. Tetra(2,2,6,6-tetramethyl-3,5- heptanedionato)hafnium, Hf(tmhd)4 is used as received without any further purification (Gelest Inc., Morrisville, PA). Coleman grade (99.99 %) carbon dioxide, ultra high 119

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