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temperature to induce quicker dissolution of precursor into the CO2 (t = 60 min.). Next, hydrogen is loaded into the system using a manifold of known volume (70 mL). The aluminum stage is then quickly heated (~ 15 s.) to the desired reaction temperature and maintained for a set time. The heated stage is then allowed to cool down (~ 15 s.) while fresh CO2 is used to flush multiple reactor volumes through the system to remove reaction byproducts and unreacted precursor. The effluent is passed through an activated carbon bed and silicon oil bubbler before being vented to the atmosphere. The reaction sequence is repeated as many times as necessary to fabricate the subsequent device layers. A different ceramic mask is used in each deposition so that sequentially smaller concentric circles of deposited materials, Figure 4.25, are deposited until the desired stack is created. 121PDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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