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Figure 4.25: Procedure for creating mutli-layer sequentially smaller circular film stacks via SFD, specifically Ru/HfO2/Ru. 4.3.2 Results and Discussion The fabrication of mutli-layer stacks by SFD is reported. A three layer stack of Ru/TiO2/Ru on silicon wafers is first reported. Then, the 3 layer multi-stack of Ru/HfO2/Ru on silicon wafers is reported. The typical reaction conditions for each layer of the Ru/TiO2/Ru multi-layer stack are reported in Table 4.6. The typical reaction conditions for each layer of the Ru/HfO2/Ru multi-layer stack are reported in Table 4.7. 122PDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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