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Table 4.6: Reaction conditions for Ru/TiO2/Ru multi-layer stack fabrication. Layer # Compound 1 - bottom Ru 2 - middle TiO2 3 - top Ru Precursor Ru(tmhd)2cod Ti(tmhd)2(iPr)2 Ru(tmhd)2cod Precursor wt. % 0.126 0.184 0.098 H2 wt. % 0.296 0.246 0.246 Deposition Time Temperature oC min 280 60 300 30 270 60 Table 4.7: Reaction conditions for Ru/ HfO2/Ru multi-layer stack fabrication. Layer # Compound 1 - bottom Ru 2 - middle HfO2 Precursor Ru(tmhd)2cod Hf(tmhd)4 Ru(tmhd)2cod Precursor wt. % 0.117 0.344 0.155 H2 wt. % 0.443 0.000 0.540 Deposition Time Temperature oC min 270 5 300 30 270 5 3 - top Ru XPS sputter depth analysis of the Ru/TiO2/Ru confirms all components of the stack, Figure 4.26. However, it also indicates that the interface between the each layer of the stack becomes less defined as you progress towards the substrate. This indicates that each deposited layer, during the next layers deposition reaction is undergoing a thermal cycle similar to annealing. This annealing is giving the previously deposited layers enough mobility such that the interface is eventually lost as indicated by the lower interface which went through two additional thermal cycles. FE-SEM, Figure 4.27 (right), also confirms the poor lower interface when compared to the upper interface. An interesting point to note is the non uniform growth of the TiO2, Figure 4.27 (left). Typically, TiO2 can be grown uniformly on many substrates. However, deposition is performed on ruthenium which is a known catalyst. It is proposed that the ruthenium is catalyzing the deposition of TiO2 and is the reason why there are thicker films forming at closed corners on the substrate and not on open corners. However, since the goal of these depositions is to create nano-sized devices, both well defined interfaces as well as 123PDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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