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Figure 4.27: FE-SEM image of a Ru/TiO2/Ru stack. Non uniform growth of TiO2 is observed (left). The lower Ru and TiO2 interface is less defined than the upper interface (right). An alternative dielectric layer is hafnia, HfO2. XPS sputter depth analysis of the Ru/HfO2/Ru confirms all components of the stack, Figure 4.28. The interface between each layer of the stack is much more defined than the Ru/TiO2/Ru stack. FE-SEM, Figure 4.29 (left), shows a zoomed in image of the stack deposited on the complex topography of a silicon substrate. Figure 4.29 (right), shows the conformal coverage of all three stacks on the silicon substrate. Figure 4.30 is a labeled top-down digital image of the Ru/HfO2/Ru stack after all depositions are completed. 125PDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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