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Supercritical Fluid Deposition Of Thin Metal Films

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Supercritical Fluid Deposition Of Thin Metal Films ( supercritical-fluid-deposition-of-thin-metal-films )

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6.1 Conclusions CHAPTER 6 CONCLUSIONS AND FUTURE WORK The main goal of this work is take the supercritical fluid deposition technique from a demonstrated technology to a point where it is a viable option for the miniaturization of microelectronic devices in industry. Other technologies are identified to overcome certain aspects of the entire miniaturization challenge, from a top-down method, as a whole, however none can fully satisfy all the needs for industrial integration. From conformal coverage over large surface areas in complex geometries to industry scale cost-effective solutions for depositing thin films, supercritical fluid deposition technology can meet these challenges. 6.1.1 Kinetics The challenge of industrial acceptance of SFD technology is first approached from the scale-up demands. An in depth study to understand the chemistry behind the deposition of thin films in supercritical fluid technology is undertaken. The kinetics of ruthenium thin film deposition by supercritical fluids using bis(2,2,6,6-tetramethyl-heptane-3,5-dionato)(1,5-cyclooctadiene)ruthenium(II) as the precursor is studied. Reaction rate orders are determined and a Langmuir – Hinshelwood deposition mechanism is proposed. The apparent activation energy is found to be 45.3 kJ/mol over the temperature range of 240 °C to 280 °C. A study on the growth rate dependence of precursor concentration indicates a first order reaction rate order for concentrations less than 0.06 wt. % and zero order for concentrations higher than 0.06 wt. 170

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