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%. The zero order deposition kinetics of SFD at high precursor concentration is the enabling feature of this technology that provides conformal film deposition in high aspect ratio and topographically complex features that overcomes the limitations of CVD technology to deposit conformal films. Next, reaction pressure is studied and is shown to have no effect on the growth rate over a large process window of 135 bar to 200 bar. Hydrogen concentration is also studied and has a second order effect on growth rate for concentrations less than 0.26 wt. % and a zero order effect on concentrations above that. The precursor decomposition products (tmhd, cod and cot) are studied to determine their affect on growth rate. Tmhd and cod have a negative first order effect on film growth which is attributed to their competition for surface active sites thereby decreasing the probability of a successful surface reaction. Cot shows negligible negative effects on growth rate which is attributed to cot having no affinity for the surface. The surface reaction is proposed to be rate determining. 6.1.2 Adhesion Enhancement and Mechanical Testing The next challenge is that of performance and reliability of films for microelectronics after their deposition. A study to quantify the adhesion of metallization layers with and without the use of sacrificial interfacial adhesion promotion layers is performed. A fivefold increase in adhesion strength is observed for PAA modified Cu/TaN interfaces in which the thin copper films are deposited by the hydrogen assisted reduction of bis(2,2,7-trimethyloctane-3,5-dionato) copper in supercritical carbon dioxide. PAA pretreatment is carried out via spin coating. The remaining 15 nm layer at the interface 171PDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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