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becomes sacrificial at the reaction conditions used, leaving behind no trace of the PAA. The resulting average interfacial adhesion energy is just above 5 J/m2, which meets adhesion standards in the semiconductor industry. The adhesion measurements are performed with a custom built four-point bend fracture mechanics testing system. Comparison of the copper film thickness to the measured adhesion energy indicated that there is no effect on the adhesion energy as the film thickness changes. Finally, it is observed that the growth rate of copper during deposition on surfaces pretreated with PAA is faster due to the higher number of available surface sites for the reduction reactions. 6.1.3 Applications The final challenge sought out by this work is to both identify areas of development that would benefit from the SFD technology and then seek to demonstrate the ability of SFD to satisfy the difficulties associated with that technology. By doing this, the versatility of SFD technology is established and its ability to satisfy many industrial applications. 6.1.3.1 Cobalt/Platinum The successful co-deposition of cobalt and platinum onto TaN capped silicon wafers using CoCp2 as the cobalt source and Pt(Me)2cod as the platinum source in a hot wall reactor at both 60 oC and 150 oC is performed. The deposition of platinum itself or no deposition at all in the cold wall reactor is attributed to parasitic deposition to the heated sample stage. The tmhd ligand in Co(tmhd)3 is etching the cobalt during deposition resulting in high purity platinum films being deposited. Finally, XRD is used 172PDF Image | Supercritical Fluid Deposition Of Thin Metal Films
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