SYNTHESIS OF GAMMA MONOCLINIC SULFUR

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SYNTHESIS OF GAMMA MONOCLINIC SULFUR ( synthesis-gamma-monoclinic-sulfur )

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10.107/s0108270192009661(1993). 29 30 US 10,991,944B2 25Moon,S.etal.Encapsulatedmonoclinicsulfurforstable sulfurthatbestmatchesmonoclinicgammaphasesulfur cyclingofli-srechargeablebateries.AdvMater25, usingPDXLVersion2.8.4.0IntegratedPowderDifraction 6547-6553,doi:10.102/adma.201303166(2013). Software;monoclinicgammaphasesulfurorientedinthek 26Galacher,A.C.&Pinkerton,A.A.Aredeterminationof direction,andmonoclinicsulfurthatbestmatchesmono monclinicy-sulfur.ActaCrystalographicaSectionC 5clinicgammaphasesulfurorientedinthekdirectionusing CrystalStructureCommunications49,125-126,doi: PDXLVersion2.8.4.0IntegratedPowderDifractionSoft structureofmonoclinicsulfur.InorganicChemistry15, asubstratewithmonoclinicsulfurdepositedthereinthatis 19-201,doi:10.1021/ic50162a059(1976). 10 suitableforuseasacathodeinanelectrodeofacelor 28Jung,S.C.&Han,Y.-K.Monoclinicsulfurcathode bateryandaloadingofthemonoclinicphasesulfuronthe utilizingcarbonforhigh-performancelithium-sulfurbat- substrateisatleast0.5mg/cm2. teries.JournalofPowerSources325,495-50,doi: 13.Themethodofclaim1,whereinthedepositingstepis 10.1016/j.jpowsour.2016.06.057(2016). cariedoutinthesealedvapordepositionaparatusata 29Takahagi,T.& Ishitani,A.XPS studyonthesurface 15temperatureoffrom150°C.to210°C. structureofcarbonfibersusingchemicalmodificationand 14.Themethodofclaim1,whereinthedepositingstepis Clslineshapeanalysis.Carbon26,389-395,doi: cariedoutforaperiodof10to30hours. 10.1016/0008-6223(88)90231-x(1988). 15.Themethodofclaim1,whereinthecolingstepis 30Liang,X.etal.Ahighlyeficientpolysulfidemediatorfor cariedoutbyexposingthevapordepositionaparatusor lithium-sulfurbateries.Nat Commun 6,5682,doi:20thecathodetoatemperatureoffromabout-20°C.toabout ware . 27Templeton,L.K.,Templeton,D.H.&Zalkin,A.Crystal 12.Themethodofclaim1,whereinthemethodprovides 10.1038/ncomms6682(2015). What is claimed is: 25°C. 16.Themethodofclaim1,whereinthemonoclinicphase 1.Amethodofdepositingmonoclinicsulfuronasubstrate sulfurcomprisesaformofsulfurselectedfromthegroup ofaporousmaterial,comprisingstepsof: consistingofmonoclinicgammaphasesulfur;monoclinic depositingmonoclinicphasesulfurthatisstableata25sulfurthatbestmatchesPDFCardNo.:0-013-0141Quali temperaturebelow80°C.viavapordepositionontothe ty:BforRosickyite,monoclinicgammaphasesulfur,using substrateoftheporousmaterialinasealedvapor PDXLVersion2IntegratedPowderDifractionSoftware. deposition aparatus ata temperature suficientto 17.Themethodofclaim16,whereinthesubstrateis vaporizesulfurandforatimesuficienttoprovidethe non-conductiveandthemethodprovidesasubstratewith monoclinicphasesulfur,and 30monoclinicsulfurdepositedthereinthatissuitableforuseas colingthemonoclinicphasesulfurdepositedonthe acathodeinanelectrodeofacelorbateryandaloading substrateoftheporousmaterialtoatemperatureof ofthemonoclinicphasesulfuronthesubstrateisatleast0.5 0-50°C., mg/cm2andthedepositingstepiscariedoutinthesealed whereinthesubstrateispositionedinthevapordeposition vapordepositionaparatusatatemperatureoffrom150°C. aparatuswithagabbetwenasurfaceofaliquidsulfur35to210°C.foraperiodof10to30hours. reservoirandthesubstratesuchthatthesubstratedoesnot 18.Amethodofdepositingmonoclinicsulfuronasub comeintocontactwithliquidsulfurduringthevapordepo- strateofaporousmaterial,comprisingstepsof: sitionstep. depositingmonoclinicphasesulfurthatisstableata 2.Themethodofclaim1,whereinthemethodprovidesa temperaturebelow80°C.viavapordepositionontothe substratewithmonoclinicsulfurdepositedthereinthatis40 substrateoftheporousmaterialinasealedvapor suitableforuseasacathodeinanelectrodeofacelor deposition apparatus at a temperature suficient to bateryandaloadingofthemonoclinicphasesulfuronthe vaporizesulfurandforatimesuficienttoprovidethe substrateisatleast0.05mg/cm2. monoclinicphasesulfur,and 3.Themethodofclaim1,whereinthedepositingstepis colingthemonoclinicphasesulfurdepositedonthe cariedoutinthesealedvapordepositionaparatusata45 substrateoftheporousmaterialtoatemperatureof temperatureoffrom140°C.to350°C. 0-50°C., 4.Themethodofclaim1,whereinthedepositingstepis whereinthesubstrateisnon-conductive. cariedoutforaperiodofatleastabout1minute. 19.Amethodofdepositingmonoclinicsulfuronasub 5.Themethodofclaim1,whereinthecolingstepis strateofaporousmaterial,comprisingstepsof: cariedoutbyexposingthevapordepositionaparatusor50 depositingmonoclinicphasesulfurthatisstableata thecathodetoatemperatureoflesthan50°C. temperaturebelow80°C.viavapordepositionontothe 6.Themethodofclaim5,whereinthevapordeposition substrateoftheporousmaterialinasealedvapor aparatusiscoledimediatelyuponcompletionofthe depositionaparatusatatemperaturesuficientto depositingstep. 7.Themethodofclaim1,whereinthesubstrateofthe 5 monoclinicphasesulfur,and porousmaterialhasaporevolumeof10-95%afterdeposi- colingthemonoclinicphasesulfurdepositedonthe tionofthemonoclinicphasesulfuronthesubstrate. 8. The method of claim 1, wherein the substrate is substrateoftheporousmaterialtoatemperatureof 0-50° C., whereinthemethodprovidesasubstratewithmonoclinic conductive. 9.Themethodofclaim1,whereinthesubstratecomprises 60 sulfurdepositedthereinthatissuitableforuseasacathode inanelectrodeofacelorbateryandaloadingofthe 10.Themethodofclaim9,whereinthecarbonnanofibers monoclinicphasesulfuronthesubstrateisatleast0.5 ontowhichthemonoclinicphasesulfurisdepositedare mg/cm2andthedepositingstepiscariedoutinthesealed vapordepositionaparatusatatemperatureoffrom150°C. carbonnanofibers. fre-standingcarbonnanofibers. 1.Themethodofclaim1,whereinthemonoclinicphase65to210°C.foraperiodof10to30hours. sulfurcomprisesaformofsulfurselectedfromthegroup 20.Themethodofclaim19,whereinthecolingstepis consistingofmonoclinicgammaphasesulfur;monoclinic cariedoutbyexposingthevapordepositionaparatusor vaporizesulfurandforatimesuficienttoprovidethe

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