PDF Publication Title:
Text from PDF Page: 011
orsolventmixturemaycompriseacombinationofanyofthe Solventsmentionedherein.Insomeembodiments,thesolvent compriseswater,ethanol,propanol,acetone,ethyleneoxide, benzene,toluene,ethers,cyclohexanone,butyrolactone,45 methylethylketone,andanisole. asdepositionofcapfilmbyPECVDtechniques,andviaand trenchformationbypaterningbymeansofetchingandash ing,atomiclayerdeposition,physicalvapordeposition,anda chemicalvapordepositiontreatmenttendtoremovecarbon containingmoietieswhicharehydrophobicgroupsfromthe organosilicateglasdielectricfilmsandreplacethemwith silanolgroups.Undesirablepropertiesresultwhentheorga nosilicateglasdielectricfilmscontainsilanolgroups.Sil anols,andthewaterthattheycanadsorbfromtheairare highlypolarizableinanelectricfield,andthuswilraisethe dielectricconstantofthefilm,andwilllowerresistancetowet cleaningchemistriesandincreaseVolatileevolution.Also, whenthetrenchesandviasarefilledwithametalandsub US 7,678,712B2 10 “non-polarmeansthatcharacteristicofamoleculeorcom includeSubjectingthefilmtoradiantenergy,e.g.,ultraviolet, poundthatcreatesanequalcharge,partialchargeorsponta electronbeam,microwaveenergy,andthelike. neouschargedistributionatonepointoforalongthemol U.S.Pat.Nos.6,204.202and6,413,882,incorporatedby eculeorcompound.Insomecontemplatedembodiments,the Solventorsolventmixture(comprisingatleasttwosolvents) referenceherein,providesilicon-basedprecursorcomposi tionsandmethodsforformingnanoporoussilicadielectric filmsbydegradingorvaporizingoneormorepolymersor oligomerspresentintheprecursorcomposition.U.S.Pat.No. 6,495,479,providessilicon-basedprecursorcompositions andmethodsforformingnanoporoussilicadielectricfilmsby degradingorvaporizingoneormorecompoundsorpolymers presentintheprecursorcomposition.U.S.Pat.No.5,895.263 describesformingananoporoussilicadielectricfilmona Substrate,e.g.,awafer,byapplyingacompositioncompris ingdecomposablepolymerandorganicpolysilicai.e.,includ ingcondensedorpolymerizedsiliconpolymer,heatingthe compositiontofurthercondensethepolysilica,anddecom posingthedecomposablepolymertoformaporousdielectric layer. ProcessesforaplicationofprecursortoaSubstrate,aging, curing,planarization,andrenderingthefilm(s)hydrophobic aredescribed,forexample,inU.S.Pat.Nos.6,589,889and 6,037.275,amongothers.Substratesandwaferscontem platedhereinmaycompriseanydesirableSubstantialysolid material.Particularlydesirablesubstratelayerswouldcom prisefilms,glas,ceramic,plastic,metalorcoatedmetal,or compositematerial.Inpreferedembodiments,thesubstrate comprisesasiliconorgermaniumarsenidedieorwaferSur face,apackagingSurfaceSuchasfoundinacopper,silver, nickelorgoldplatedleadframe,acopperSurfaceSuchas foundinacircuitboardorpackageinterconecttrace,a via-walorstifenerinterface(“copper”includesconsider ationsofbarecopperandit’soxides),apolymer-basedpack agingorboardinterfaceSuchasfoundinapolyimide-based flexpackage,leadorothermetalaloysolderbalSurface, glasandpolymerssuchaspolyimide.The“substrate'may evenbedefinedasanotherpolymerchainwhenconsidering cohesiveinterfaces.Inmorepreferedembodiments,thesub stratecomprisesamaterialcommoninthepackagingand circuitboardindustriessuchassilicon,copper,glas,and anotherpolymer. comprisesthosesolventsthatareconsideredpartofthe hydrocarbonfamilyofsolvents.Hydrocarbonsolventsare thosesolventsthatcomprisecarbonandhydrogen.Itshould beunderstoodthatamajorityofhydrocarbonsolventsare non-polar;however,thereareafewhydrocarbonsolventsthat10 couldbeconsideredpolar.HydrocarbonSolventsaregener alybrokendownintothreclases:aliphatic,cyclicand aromatic.Aliphatichydrocarbonsolventsmaycompriseboth straight-chaincompoundsandcompoundsthatarebranched andpossiblycroslinked,however,aliphatichydrocarbon15 Solventsarenotconsideredcyclic.CyclichydrocarbonSol ventsarethosesolventsthatcompriseatleastthrecarbon atomsorientedinaringstructurewithpropertiessimilarto aliphatichydrocarbonSolvents.AromatichydrocarbonSol ventsarethosesolventsthatcomprisegenerallythreormore unsaturatedbondswithasingleringormultiplerings attachedbyacommonbondand/ormultipleringsfused together.Contemplatedhydrocarbonsolventsincludetolu ene,Xylene,p-Xylene,m-Xylene,mesitylene,Solventnaphtha H.SolventnaphthaA,alkanes,suchaspentane,hexane,iso25 hexane,heptane,nonane,octane,dodecane,2-methylbutane, hexadecane,tridecane,pentadecane,cyclopentane,2,2,4-tri methylpentane,petroleumethers,halogenatedhydrocarbons, Suchaschlorinatedhydrocarbons,nitratedhydrocarbons, benzene, 1,2-dimethylbenzene, 1,2,4-trimethylbenzene,30 mineralspirits,kerosene,isobutylbenzene,methylnaphtha lene,ethyltoluene,ligroine.Particularlycontemplatedsol ventsinclude,butarenotlimitedto,pentane,hexane,hep tane,cyclohexane,benzene,toluene,Xyleneandmixturesor combinationsthereof. 35 Inothercontemplatedembodiments,thesolventorsolvent mixturemaycomprisethosesolventsthatarenotconsidered partofthehydrocarbonsolventfamilyofcompounds,suchas ketones,suchasacetone,3-pentanone,diethylketone,methyl ethylketoneandthelike,alcohols,ketones,esters,ethersand40 amines.Inyetothercontemplatedembodiments,thesolvent Subsequentsemiconductormanufacturingprocessessuch Itisstilfurthercontemplatedthatalternativelowdielectric constantmaterialmayalsocompriseaditionalcomponents. Forexample,wherethelowdielectricconstantmaterialis exposedtomechanicalstres,softenersorotherprotective50 agentsmaybeadded.Inothercaseswherethedielectric materialisplacedonaSmoothSurface,adhesionpromoters mayadvantageouslyemployed.Instilothercases,theaddi tionofdetergentsorantifoamagentsmaybedesirable.In general,aprecursorintheformofe.g.,aspin-on-glascom 55 jectedtoanannealingtreatment,metalshrinkageinducesa positionthatincludesoneormoreremovablesolvents,is appliedtoasubstrate,andthenpolymerizedandSubjectedto solventremovalinsuchawayastoformadielectricfilm comprisingnanometer-scalepores. WhenformingSuchnanoporousfilms,e.g.,whereinthe60 precursorisappliedtoaSubstratebyspin-coating,thefilm coatingistypicalycatalyzedwithanacidorbasecatalystand watertocausepolymerization/gelation(“aging)duringan initialheatingstep.Thefilmisthencured,e.g.,bySubjecting thefilmtooneormorehighertemperatureheatingstepsto,65 interalia,removeanyremainingsolventandcompletethe polymerizationproces,asneeded.Othercuringmethods stressontheviaandtrenchwallsandcauseundesirableVoids toforminsidethedielectricmaterialbetweentheviasand trenches.Whenthefilmisanorganosilicatedielectricfilm,it hasoftenbeenhasbeenpreviouslysubjectedtoatleastone damagingtreatmentwhichremovesatleastaportionofpre viouslyexistingcarboncontainingmoietiesfromtheorgano silicatedielectricfilm.Suchfilmdamagecanresultfromsuch treatmentsaschemicalexposure,plasmaexposure,thermal treatment,Vacuumtreatment,ionizingradiationexposure, electronbeamexposure,UVexposure,etching,ashing,wet cleaning,plasmaenhancedchemicalvapordeposition,Super criticalfluidexposureandcombinationsthereof.ThesetreatPDF Image | VAPOR PHASE TREATMENT OF DELECTRIC MATERALS
PDF Search Title:
VAPOR PHASE TREATMENT OF DELECTRIC MATERALSOriginal File Name Searched:
US7678712.pdfDIY PDF Search: Google It | Yahoo | Bing
Sulfur Deposition on Carbon Nanofibers using Supercritical CO2 Sulfur Deposition on Carbon Nanofibers using Supercritical CO2. Gamma sulfur also known as mother of pearl sulfur and nacreous sulfur... More Info
CO2 Organic Rankine Cycle Experimenter Platform The supercritical CO2 phase change system is both a heat pump and organic rankine cycle which can be used for those purposes and as a supercritical extractor for advanced subcritical and supercritical extraction technology. Uses include producing nanoparticles, precious metal CO2 extraction, lithium battery recycling, and other applications... More Info
| CONTACT TEL: 608-238-6001 Email: greg@infinityturbine.com | RSS | AMP |